Semiconductor lighting device with wavelength conversion on back-transferred light path

• US 8,169,135 B2
• Filed: 12/17/2008
• Issued: 05/01/2012
• Est. Priority Date: 12/17/2008
• Status: Expired due to Fees

• Current Assignee: LEDnovation, Inc.
• Original Assignee: LEDnovation, Inc.
• Inventors: Zhai, Jinhui, Morejon, Israel J., Bui, Thong
• Primary Examiner(s): Patel, Ashok
• Application Number:
  US12/336,695
• Publication Number:
  US 20100149814A1
• Time in Patent Office: 1,231 Days
• Field of Search: None
• US Class Current: 313/501
• CPC Class Codes: F21K 9/64 using wavelength conversion means distinct or spaced from the light-generating element, e.g. a remote phosphor layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/508 having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Abstract

A semiconductor lighting device includes a semiconductor light emitter packaged on a reflective substrate to emit a first light and a remote wavelength conversion layer on a back-transferred light path to convert the back-transferred first light into a forward second light. A filter is disposed on a light emitting forward path with a space to the semiconductor light emitter to reflect back at least a portion of the first light. A diffusive member may be positioned outside of the filter to diffuse the forward passing light before it exits from the semiconductor lighting device. As a second aspect of this invention, a solid state lighting device includes a short wavelength semiconductor emitter; a long wavelength semiconductor emitter with wavelength in reddish orange range; a filter on a light emitting forward path to reflect back a portion of short wavelength first light; and a wavelength conversion component on a back-transferred light path. The device produces a mixture of warm white light in a correlated color temperature from 2700˜3500 K and color rendering index at least 85 for any indoor lighting application.

Claims

1. A solid state lighting device comprising:

a semiconductor light emitting component packaged on a reflective substrate, said semiconductor light emitting component emitting a primary first light;

a long pass dichroic filter disposed to receive said primary first light that is emitted from said semiconductor light emitting component, said long pass dichroic filter reflecting back at least 50% of said primary first light that is emitted from said semiconductor light emitting component;

a first wavelength down-conversion layer on said reflective substrate, said first wavelength down-conversion layer absorbing said reflected primary first light from said long pass dichroic filter, said reflected primary first light from said long pass dichroic filter exciting a forward second light from said first wavelength down-conversion layer;

a light diffuser member positioned on top of said long pass dichroic filter; and

a power line electrically connected to said semiconductor light emitting component.

2. The solid state lighting device according to claim 1, further comprising:

said primary first light that is emitted from said semiconductor light emitting component is a blue light having a peak wavelength range from about 430 nm to 470 nm; and

said forward second light that is emitted from said first wavelength down-conversion layer is a yellow light having a peak wavelength range from about 550 nm to 570 nm.

3. The solid state lighting device according to claim 1, further comprising:

said primary first light that is emitted from said semiconductor light emitting component is a blue light having a peak wavelength range from about 430 nm to 470 nm; and

said forward second light that is emitted from said first wavelength down-conversion layer is a mixture of green light and orange light.

4. The solid state lighting device according to claim 1, further comprising:

said primary first light that is emitted from said semiconductor light emitting component is a near-UV light having a peak wavelength range from about 380 nm to 420 nm; and

said forward second light that is emitted from said first wavelength down-conversion layer is a mixture of blue light, green light and red light.

5. The solid state lighting device according to claim 1, further comprising a reflective coating around an interior wall of said solid state lighting device.

6. The solid state lighting device according to claim 1, wherein said wavelength down-conversion layer covers said semiconductor light emitting component.

7. The solid state lighting device according to claim 1, further comprising a second wavelength conversion layer mixed into said first wavelength down-conversion layer, said reflected primary first light from said long pass dichroic filter exciting a yellow light from said first wavelength conversion layer, said yellow light having a peak wavelength range from about 550 nm to 570 nm and said reflected primary first light from said long pass dichroic filter exciting a third reddish orange light from said second wavelength conversion layer, said third reddish orange light having a peak wavelength range from about 610 nm to 620 nm.

8. The solid state lighting device according to claim 1, further comprising a reddish orange wavelength conversion layer deposited on top of said semiconductor light emitting component, said reddish orange wavelength conversion layer absorbing a portion of said reflected primary first light from said long pass dichroic filter said reflected primary first light from said long pass dichroic filter exciting a reddish orange light from said reddish orange wavelength conversion layer, said reddish orange light having a peak wavelength range from about 610 nm to 620 nm.

9. The solid state lighting device according to claim 1, wherein said wavelength conversion layer further comprising a multiple phosphor coated area.

10. The solid state lighting device according to claim 9, wherein said multiple phosphor coated area further comprising a yellow phosphor coating area and a reddish orange phosphor coating area.

11. The solid state lighting device according to claim 1, wherein said semiconductor light emitting device further comprising:

a first group of semiconductor light emitting components packaged on said reflective substrate, said first group of semiconductor light emitting components emitting a primary first blue light having a peak wavelength range from about 430 nm to 470 nm;

a second group of semiconductor light emitting components packaged on said reflective substrate, said second group of semiconductor light emitting components emitting a second reddish orange light having a peak wavelength range from about 610 nm to 620 nm;

said long pass dichroic filter disposed inside of a diffusive window, said long pass dichroic filter receiving said primary blue light that is emitted from said first group of semiconductor light emitting components, said long pass dichroic filter reflecting back said primary blue light that is emitted from said first group of semiconductor light emitting components; and

said first wavelength down-conversion layer absorbing said reflected primary first blue light from said long pass dichroic filter, said reflected primary first blue light from said long pass dichroic filter exciting a second yellow light from said first wavelength down-conversion layer.

12. The solid state lighting device according to claim 11, wherein said wavelength down-conversion layer is selected from the group consisting of a separated ceramic wavelength conversion plate, a lumiramic phosphor plate and a polymer phosphor film.