Semiconductor device with integrated coils

• US 8,169,285 B2
• Filed: 05/25/2007
• Issued: 05/01/2012
• Est. Priority Date: 05/25/2007
• Status: Active Grant

• Current Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Austria Ag (Infineon Technologies AG)
• Inventors: Höglauer, Josef, Knott, Bernhard
• Primary Examiner(s): Mai, Anh
• Assistant Examiner(s): Hinson, Ronald
• Application Number:
  US11/753,684
• Publication Number:
  US 20080290992A1
• Time in Patent Office: 1,803 Days
• Field of Search: 336/200, 334/10.1, 257/679, 340/10.1
• US Class Current: 336/200
• CPC Class Codes: H01F 17/0006 Printed inductances printed coils for dynamo-electric machines H02K3/26; printed circuits H05K
• CPC Class Codes: H01F 41/041 Printed circuit coils apparatus or processes for manufacturing printed circuits in general H05K3/00
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49171 Fan-out arrangements
• CPC Class Codes: H01L 2224/4943 the connecting portions being staggered
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 Silicon [Si]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/30107 : Inductance

Abstract

A semiconductor device with a number of integrated coils is disclosed. In one embodiment, a first coil portion and a second coil portion are at least in part overlapping each other. Another embodiment provides a process for manufacturing a semiconductor device having at least the processes of generating a first coil portion, generating a second coil portion, wherein at least a part of the first coil portion and a part of the second coil portion are overlapping each other.

Claims

1. A semiconductor device comprising:

a number of integrated coils;

a first layer;

a second layer made from a first material, the second layer comprising an upper wall and a side wall substantially perpendicular to the upper wall; and

a chamfered adhesive material different from the first material, the chamfered adhesive material in direct contact with the side wall of the second layer,

wherein a conductive line of a first coil portion is positioned on the first layer and a conductive line of a second coil portion is positioned on the upper wall of the second layer and the chamfered adhesive material, which is in direct contact with the side wall of the second layer.

2. The semiconductor device of claim 1, wherein the first coil portion and the second coil portion are part of one integrated coil.

3. The semiconductor device of claim 1, wherein the first coil portion and the second coil portion belong to different integrated coils of the semiconductor device.

4. The semiconductor device of claim 1, wherein the first coil portion and the second coil portion are positioned at least in part in different layers of the semiconductor device.

5. The semiconductor device of claim 1, wherein at least a part of the first coil portion is arranged in a first layer and at least a part of the second coil portion is arranged in a second layer, wherein the first and second layer are substantially parallel aligned and in a vertical arrangement to each other.

6. The semiconductor device of claim 1, wherein at least a part of the first coil portion is arranged on a chip of the semiconductor device and at least a part of the second coil portion is arranged on a chip carrier or substrate of the semiconductor device.

7. The semiconductor device of claim 1, wherein a number of conductor paths of the integrated coil are extending at least in part across a chip of the semiconductor device.

8. The semiconductor device of claim 1, wherein a number of conductor lines of the integrated coil are extending at least in part across a chip carrier or substrate of the semiconductor device.

9. The semiconductor device of claim 1, wherein the first coil portion and the second coil portion provide a coil pair.

10. The semiconductor device of claim 1, wherein the first coil portion provide a lower portion of an integrated coil and the second coil portion provide an upper portion of an integrated coil or the first coil portion provide an upper portion of an integrated coil and the second coil portion provide a lower portion of an integrated coil.

11. The semiconductor device of claim 1, wherein a number of windings or conductor lines of the integrated coil are realized by using wire bonds.

12. The semiconductor device of claim 1, wherein a number of conductor lines of the integrated coil are printed conductor paths made of conductive material.

13. The semiconductor device of claim 1, wherein a number of conductor lines of the integrated coil are generated by using an conductive fluid, carbon ink, silver ink or copper ink.

14. The semiconductor device of claim 1, wherein a number of conductor lines of the integrated coil are arranged on a chip of the semiconductor device.

15. The semiconductor device of claim 1, wherein a number of conductor lines of the integrated coil are arranged on a chip carrier or substrate of the semiconductor device.

16. The semiconductor device of claim 1, wherein a number of windings of the integrated coil are isolated conductor paths.

17. The semiconductor device of claim 1, wherein a number of windings of the integrated coil are structured a conductor path generated by respective manufacturing processes producing a respective structure.

18. The semiconductor device of claim 1, wherein a number of windings of the integrated coil are structured as an isolated printed conductor path made of conductive material, as a structured lead frame, and as an adhesive foil.

19. The semiconductor device of claim 18, wherein the adhesive foil is pre-structured and arranged on a chip and/or on a chip carrier or substrate of the semiconductor device.

20. The semiconductor device of claim 1, wherein the first coil portion and the second coil portion provide coil pairs arranged as two separate coil pairs, or as a bifilar coil.

21. The semiconductor device of claim 1, further comprising one of electrodes and pads for contacting the first and second coil portion.

22. The semiconductor device of claim 21, wherein the electrodes and pads are contacted by bonding wires, and the bonding wires provide at least a part of the first and second coil portion.

23. A system comprising:

a semiconductor device having a number of integrated coils, a first layer, a second layer made from a first material and comprising an upper wall and a side wall substantially perpendicular to the upper wall, and a chamfered adhesive material different from the first material and in direct contact with the side wall of the second layer, wherein a conductive line of a first coil portion is positioned on the first layer and a conductive line of a second coil portion is positioned on the upper wall of the second layer and the chamfered adhesive material, which is in direct contact with the side wall of the second layer; and

an integrated circuit coupled to the semiconductor device.

24. The system of claim 23, comprising:

where the system further comprises an RFID chip.

25. The system of claim 23, comprising:

an external device, configured to communicate with the semiconductor device via at least one of the number of integrated coils.

26. A system comprising a chip carrier, a chip comprising an upper wall and a side wall, and a chamfered adhesive material in direct contact with the side wall of the chip and extending to the upper wall, wherein a conductive line of a first coil portion is provided on the chip carrier and a conductive line of a second coil portion is provided directly on the upper wall of the chip, directly on an interface between the upper wall of the chip and the chamfered adhesive material, and directly on the chamfered adhesive material, which is in direct contact with the side wall of the chip.