Failure detecting method, failure detecting apparatus, and semiconductor device manufacturing method
First Claim
1. A failure detecting method comprising:
- inputting a foreign substance inspection map created by foreign substance inspection for a wafer surface after each processing process in a wafer processing process;
inputting a die sort map created by a die sort test after the wafer processing process;
setting a plurality of region segments in the wafer;
setting a region number for each of the region segments;
calculating foreign substance density in each of the region segments, based on the foreign substance inspection map, and plotting the foreign substance density, using the region numbers, to calculate a foreign substance inspection map waveform characteristic amount;
calculating failure density in each of the region segments, based on the die sort map, and plotting the failure density, using the region numbers, to calculate a die sort map waveform characteristic amount;
calculating similarity between the foreign substance inspection map waveform characteristic amount and the die sort map waveform characteristic amount; and
identifying a processing process that is a cause of failure occurrence, based on the similarity,wherein a plurality of first regions, into which the wafer is divided in a radial direction, and a plurality of fan-shaped second regions, into which the wafer is divided in a central angle direction, are combined to set the plurality of region segments.
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Accused Products
Abstract
A method for inputting a foreign substance inspection map created by foreign substance inspection for a wafer surface after each processing process in a wafer processing process, inputting a die sort map created by a die sort test after the wafer processing process, setting region segments in the wafer, setting a region number for each segment, calculating foreign substance density of the region segments, based on the foreign substance inspection map, and plotting the foreign substance density, using the region numbers, to calculate a foreign substance inspection map waveform characteristic amount, calculating failure density in the region segments, based on the die sort map, and plotting the failure density, using the region numbers, to calculate a die sort map waveform characteristic amount, calculating similarity between the foreign substance inspection map waveform characteristic amount and the die sort map waveform characteristic amount, and identifying a processing process cause of failure occurrence.
12 Citations
9 Claims
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1. A failure detecting method comprising:
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inputting a foreign substance inspection map created by foreign substance inspection for a wafer surface after each processing process in a wafer processing process; inputting a die sort map created by a die sort test after the wafer processing process; setting a plurality of region segments in the wafer; setting a region number for each of the region segments; calculating foreign substance density in each of the region segments, based on the foreign substance inspection map, and plotting the foreign substance density, using the region numbers, to calculate a foreign substance inspection map waveform characteristic amount; calculating failure density in each of the region segments, based on the die sort map, and plotting the failure density, using the region numbers, to calculate a die sort map waveform characteristic amount; calculating similarity between the foreign substance inspection map waveform characteristic amount and the die sort map waveform characteristic amount; and identifying a processing process that is a cause of failure occurrence, based on the similarity, wherein a plurality of first regions, into which the wafer is divided in a radial direction, and a plurality of fan-shaped second regions, into which the wafer is divided in a central angle direction, are combined to set the plurality of region segments. - View Dependent Claims (2, 3)
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4. A computer comprising:
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a foreign substance inspection map inputting part provided with a foreign substance inspection map created by foreign substance inspection for a wafer surface after each processing process in a wafer processing process; a die sort map inputting part provided with a die sort map created by a die sort test after the wafer processing process; a foreign substance inspection map waveform characteristic amount calculating part which sets a plurality of region segments in the wafer, sets a region number for each of the region segments, calculates foreign substance density in each of the region segments, based on the foreign substance inspection map, and plots the foreign substance density, using the region numbers, to calculate a foreign substance inspection map waveform characteristic amount; a die sort map waveform characteristic amount calculating part which sets in the wafer the same region segments and region numbers as the region segments and the region numbers set by the foreign substance inspection map waveform characteristic amount calculating part, calculates failure density in each of the region segments, based on the die sort map, and plots the failure density, using the region numbers, to calculate a die sort map waveform characteristic amount; a waveform characteristic amount comparing part which calculates similarity between the foreign substance inspection map waveform characteristic amount and the die sort map waveform characteristic amount; and a similar map retrieving part which detects the foreign substance inspection map waveform characteristic amount similar to the die sort map waveform characteristic amount, based on the similarity, wherein the foreign substance inspection map waveform characteristic amount calculating part combines a plurality of first regions, into which the wafer is divided in a radial direction, and a plurality of fan-shaped second regions, into which the wafer is divided in a central angle direction, to set the plurality of region segments. - View Dependent Claims (5, 6)
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7. A semiconductor device manufacturing method comprising:
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performing foreign substance inspection for a surface of a wafer after each processing process in a wafer processing process to create a foreign substance inspection map; performing a die sort test after the wafer processing process to create a die sort map; setting a plurality of region segments in the wafer; setting a region number for each of the region segments; calculating foreign substance density in each of the region segments, based on the foreign substance inspection map, and plotting the foreign substance density, using the region numbers, to calculate a foreign substance inspection map waveform characteristic amount; calculating failure density in each of the region segments, based on the die sort map, and plotting the failure density, using the region numbers, to calculate a die sort map waveform characteristic amount; calculating similarity between the foreign substance inspection map waveform characteristic amount and the die sort map waveform characteristic amount; and identifying a processing process that is a cause of failure occurrence, based on the similarity, wherein a plurality of first regions, into which the wafer is divided in a radial direction, and a plurality of fan-shaped second regions, into which the wafer is divided in a central angle direction, are combined to set the plurality of region segments. - View Dependent Claims (8, 9)
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Specification