Process stability of NBDE using substituted phenol stabilizers
First Claim
Patent Images
1. A method of forming a layer of carbon-doped silicon oxide on a substrate, the method comprising the steps of:
- providing a cyclic alkene composition in a first container, wherein the cyclic alkene is at least one compound selected from the group consisting of;
dipentene, phellandrene, dicyclopentadiene, alpha-terpinene, gamma-terpinene, limonene, alphapinene, 3-carene, terpinolene, norbornene, norbomadiene, 5-vinyl-2-norbornene, and 5-ethylidene-2-norbornene, a silicon containing compound in a second container, a film deposition tool, a film deposition chamber within said film deposition tool, and a stream of carrier gas to sweep said cyclic alkene composition and said silicon containing compound through a connection into the film deposition chamber, wherein said substrate is disposed within said film deposition chamber of said film deposition tool;
connecting said first and second containers to said film deposition chamber within said film deposition tool;
introducing vapors of said cyclic alkene composition and said silicon containing compound into said carrier gas stream;
transporting said vapors of said cyclic alkene composition and said silicon containing compound into said film deposition chamber via the carrier gas stream; and
forming the layer of the carbon-doped silicon oxide on the substrate, wherein said cyclic alkene composition further comprisesa stabilizer compound selected form the group consisting of;
phenol, 4-methylphenol, 3-methylphenol, 2-methylphenol, 4-ethylphenol, 4-propylphenol, 4-iso-propylphenol, 4-butylphenol, 4-sec-butylphenol, 4-iso-butylphenol, 4-tertbutylphenol, 4-methoxyphenol, 3-methoxyphenol, 2-methoxyphenol, 4-ethoxyphenol, 2(1-methylbutyl)phenol, 2-tert-butyl-6-methylphenol, 1,2- dihydroxybenzene, 2,4-di-tert-butylphenol, 2,6-di-tert-butyl-4-methylphenol (BHT), 1,3-dihydroxybenzene, hydroquinone, 2-(benzyloxy)phenol, 3,4,5-trimethoxyphenol, 3-ethoxy-4-methylphenol, 4-benzyloxyphenol, 4-benzy1-2,6-di-tert-butylphenol, 2-(2-butenyl)phenol, 4-propoxyphenol, 4-butoxyphenol, 2-(4-methylbenzyl)phenol, 2,4,6-tris-benzyloxyphenol, 2,4-dicyclohexy1-5-methylphenol, 6-tert-butyl-1,2-dihydroxybenzene and mixtures thereof,wherein the stabilizer composition is present in a concentration of from 500 ppm up to 10,000 ppm, and wherein said stabilizer compound has a boiling point lower than 265°
C.
4 Assignments
0 Petitions
Accused Products
Abstract
A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I),
R1,R2,R3,R4,R5(C6)OH Formula (I)
- wherein R′ through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the stabilizer compound is present in an amount greater than 200 ppm up to 20,000 ppm and has a boiling point lower than 265° C.
A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.
-
Citations
4 Claims
-
1. A method of forming a layer of carbon-doped silicon oxide on a substrate, the method comprising the steps of:
-
providing a cyclic alkene composition in a first container, wherein the cyclic alkene is at least one compound selected from the group consisting of;
dipentene, phellandrene, dicyclopentadiene, alpha-terpinene, gamma-terpinene, limonene, alphapinene, 3-carene, terpinolene, norbornene, norbomadiene, 5-vinyl-2-norbornene, and 5-ethylidene-2-norbornene, a silicon containing compound in a second container, a film deposition tool, a film deposition chamber within said film deposition tool, and a stream of carrier gas to sweep said cyclic alkene composition and said silicon containing compound through a connection into the film deposition chamber, wherein said substrate is disposed within said film deposition chamber of said film deposition tool;connecting said first and second containers to said film deposition chamber within said film deposition tool; introducing vapors of said cyclic alkene composition and said silicon containing compound into said carrier gas stream; transporting said vapors of said cyclic alkene composition and said silicon containing compound into said film deposition chamber via the carrier gas stream; and forming the layer of the carbon-doped silicon oxide on the substrate, wherein said cyclic alkene composition further comprises a stabilizer compound selected form the group consisting of;
phenol, 4-methylphenol, 3-methylphenol, 2-methylphenol, 4-ethylphenol, 4-propylphenol, 4-iso-propylphenol, 4-butylphenol, 4-sec-butylphenol, 4-iso-butylphenol, 4-tertbutylphenol, 4-methoxyphenol, 3-methoxyphenol, 2-methoxyphenol, 4-ethoxyphenol, 2(1-methylbutyl)phenol, 2-tert-butyl-6-methylphenol, 1,2- dihydroxybenzene, 2,4-di-tert-butylphenol, 2,6-di-tert-butyl-4-methylphenol (BHT), 1,3-dihydroxybenzene, hydroquinone, 2-(benzyloxy)phenol, 3,4,5-trimethoxyphenol, 3-ethoxy-4-methylphenol, 4-benzyloxyphenol, 4-benzy1-2,6-di-tert-butylphenol, 2-(2-butenyl)phenol, 4-propoxyphenol, 4-butoxyphenol, 2-(4-methylbenzyl)phenol, 2,4,6-tris-benzyloxyphenol, 2,4-dicyclohexy1-5-methylphenol, 6-tert-butyl-1,2-dihydroxybenzene and mixtures thereof,wherein the stabilizer composition is present in a concentration of from 500 ppm up to 10,000 ppm, and wherein said stabilizer compound has a boiling point lower than 265°
C.- View Dependent Claims (2, 3, 4)
-
Specification