Process for fabrication of nitride semiconductor light emitting device
First Claim
1. A process for fabrication of a nitride semiconductor light emitting device comprising a substrate, a nitride semiconductor layer having an upper surface on the substrate and electrodes on the nitride semiconductor, the process for fabrication of a nitride semiconductor light emitting device being characterized by device working by laser, wherein the device working by laser accomplishes formation of grooves in the semiconductor layer of the light emitting device and/or segmenting grooves in the semiconductor layer around the perimeter of the device for isolation into individual light emitting devices followed by forming an inclined surface that is a reverse taper with respect to the upper surface of the nitride semiconductor layer at the laser worked site by etching treatment and then electrode formation.
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Abstract
The present invention relates to a process for fabrication of a nitride semiconductor light emitting device comprising a substrate, a nitride semiconductor layer on the substrate and electrodes on the nitride semiconductor, the process for fabrication of a nitride semiconductor light emitting device being characterized by device working by laser, followed by etching treatment and then electrode formation.
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Citations
9 Claims
- 1. A process for fabrication of a nitride semiconductor light emitting device comprising a substrate, a nitride semiconductor layer having an upper surface on the substrate and electrodes on the nitride semiconductor, the process for fabrication of a nitride semiconductor light emitting device being characterized by device working by laser, wherein the device working by laser accomplishes formation of grooves in the semiconductor layer of the light emitting device and/or segmenting grooves in the semiconductor layer around the perimeter of the device for isolation into individual light emitting devices followed by forming an inclined surface that is a reverse taper with respect to the upper surface of the nitride semiconductor layer at the laser worked site by etching treatment and then electrode formation.
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