Method for fabricating micro-electro-mechanical system (MEMS) device
First Claim
1. A method for fabricating micro-electro-mechanical system (MEMS) device, comprising:
- providing a substrate as a single crystal substrate, having a first side and a second side, and having a MEMS region and an integrated-circuit (IC) region;
forming a structural dielectric layer over the first side of the substrate, wherein the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer;
performing a multi-stage patterning process on the substrate at the MEMS region from the second side to form a plurality of mass blocks of single crystal with different levels, wherein a portion of the structural dielectric layer is exposed; and
performing an isotropic etching process at the MEMS region to etch the structural dielectric layer over the single crystal mass blocks, wherein the mass blocks are released to form a MEMS structure.
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Abstract
A method for fabricating MEMS device includes providing a substrate having a first side and a second side. Then, a structural dielectric layer is formed over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer. A multi-stage patterning process is performed on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed. An isotropic etching process is performed from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer.
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Citations
23 Claims
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1. A method for fabricating micro-electro-mechanical system (MEMS) device, comprising:
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providing a substrate as a single crystal substrate, having a first side and a second side, and having a MEMS region and an integrated-circuit (IC) region; forming a structural dielectric layer over the first side of the substrate, wherein the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; performing a multi-stage patterning process on the substrate at the MEMS region from the second side to form a plurality of mass blocks of single crystal with different levels, wherein a portion of the structural dielectric layer is exposed; and performing an isotropic etching process at the MEMS region to etch the structural dielectric layer over the single crystal mass blocks, wherein the mass blocks are released to form a MEMS structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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Specification