Gallium nitride device with a diamond layer

• US 8,174,024 B2
• Filed: 06/10/2011
• Issued: 05/08/2012
• Est. Priority Date: 12/22/2008
• Status: Active Grant

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Korenstein, Ralph, Bernstein, Steven D., Pereira, Stephen J.
• Primary Examiner(s): LE, DUNG ANH
• Application Number:
  US13/157,653
• Publication Number:
  US 20110241018A1
• Time in Patent Office: 333 Days
• Field of Search: 257/40, 257 77- 78, 257191-194, 257/280, 257/613, 438/105, 438/590
• US Class Current: 257/77
• CPC Class Codes: H01L 21/02389 Nitrides
• CPC Class Codes: H01L 21/02527 Carbon, e.g. diamond-like carbon
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 29/1602 Diamond
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 29/267 in different semiconductor regions , e.g. heterojunctions H01L29/263 takes precedence
• CPC Class Codes: H01L 29/66431 with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT with an active layer made of a group 13/15 material H01L29/66462
• CPC Class Codes: H01L 29/66462 with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
• CPC Class Codes: H01L 29/7786 with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT

Abstract

In one aspect, a device includes a gallium nitride (GaN) layer, a first diamond layer disposed on the GaN layer, a gate structure disposed in contact with the GaN layer and the first diamond layer, and a second diamond layer having a first thermal conductivity and disposed on a second surface of the GaN layer. The gate and the first diamond layer are disposed on a first surface of the GaN layer opposite the second surface of the GaN layer.

Claims

1. A device, comprising:

a gallium nitride (GaN) layer;

a first diamond layer disposed on the GaN layer;

a gate structure disposed in contact with the GaN layer and the first diamond layer; and

a second diamond layer having a first thermal conductivity and disposed on a second surface, of the GaN layer,

wherein the gate and the first diamond layer are disposed on a first surface of the GaN layer opposite the second surface of the GaN layer.

2. The device of claim 1, further comprising a third diamond layer having a second thermal conductivity greater than the first thermal conductivity and disposed on the second diamond layer.

3. The device of claim 1, further comprising an interlayer disposed between the second diamond layer and the GaN layer.

4. The device of claim 1 wherein the second diamond layer is greater than 2 mils and the first diamond layer less than 1 mil.

5. The device of claim 1 wherein the device is one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device.

6. The device of claim 1 wherein the GaN layer comprises at least one of undoped GaN, doped GaN or GaN combined with another element.

7. A device, comprising:

a gallium nitride (GaN) layer;

a first diamond layer disposed on the GaN layer;

a gate structure disposed in contact with the GaN layer and the first diamond layer; and

a second diamond layer having a first thermal conductivity and disposed on a second surface of the GaN layer; and

an interlayer disposed between the second diamond layer and the GaN layer,

wherein the gate and the first diamond layer are disposed on a first surface of the GaN layer opposite the second surface of the GaN layer,

wherein the GaN layer comprises at least one of undoped GaN, doped GaN or GaN combined with another element.

8. The device of claim 7, further comprising a third diamond layer having a second thermal conductivity greater than the first thermal conductivity and disposed on the second diamond layer.

9. The device of claim 7 wherein the second diamond layer is greater than 2 mils and the first diamond layer less than 1 mil.

10. The device of claim 7 wherein the device is one of a high frequency device, a high electron mobility transistor (HEMT) or a microwave device.