Light emitting apparatus and method for manufacturing the same

• US 8,174,029 B2
• Filed: 04/07/2011
• Issued: 05/08/2012
• Est. Priority Date: 11/09/2001
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Yamazaki, Shunpei, Murakami, Satoshi, Sakakura, Masayuki, Takayama, Toru
• Primary Examiner(s): Clark, Sheila V
• Application Number:
  US13/082,104
• Publication Number:
  US 20110180801A1
• Time in Patent Office: 397 Days
• Field of Search: 257/81, 257/79, 257/99, 257/491, 257/432, 257/433, 257/457, 257/635, 257/640, 257/642, 257/649
• US Class Current: 257/79
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 29/16 including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile
• CPC Class Codes: H01L 29/78645 with multiple gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 30/865 Intermediate layers comprising a mixture of materials of the adjoining active layers
• CPC Class Codes: H10K 50/841 Self-supporting sealing arrangements
• CPC Class Codes: H10K 50/844 Encapsulations
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/1201 Manufacture or treatment
• CPC Class Codes: H10K 59/122 Pixel-defining structures or layers, e.g. banks
• CPC Class Codes: H10K 59/124 Insulating layers formed between TFT elements and OLED elements
• CPC Class Codes: H10K 59/871 Self-supporting sealing arrangements
• CPC Class Codes: H10K 59/873 Encapsulations
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/851 Division of substrate

Abstract

The purpose of the invention is to improve reliability of a light emitting apparatus comprising TFTs and organic light emitting elements. The light emitting apparatus according to the invention having thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode layer formed on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode layer and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer formed on the upper surface and side surface of the second organic insulation layer and having an opening over the anode layer, an organic compound layer formed in contact with the anode layer and the fourth inorganic insulation layer and containing light emitting material, and a cathode layer formed in contact with the organic compound layer containing the light emitting material, wherein the third inorganic insulation layer and the fourth inorganic insulation layer are formed with silicon nitride or aluminum nitride.

Claims

1. A display device comprising:

a terminal comprising a first conductive layer and a second conductive layer over a substrate;

an insulating layer over the second conductive layer; and

an organic compound layer containing light emitting material over the insulating layer,

wherein the second conductive layer comprises oxide conductive material,

wherein the insulating layer is in direct contact with the organic compound layer containing light emitting material and the second conductive layer, and

wherein a length of the first conductive layer extended from an edge of the substrate is larger than a length of the second conductive layer extended from the edge of the substrate.

2. The display device according to claim 1,

wherein the substrate comprises an organic resin substrate.

3. The display device according to claim 1,

wherein the insulating layer comprises an inorganic insulation material.

4. The display device according to claim 3,

wherein the inorganic insulation material is selected from the group consisting of a silicon nitride, an aluminum nitride, and an aluminum oxynitride.

5. The display device according to claim 1,

wherein the organic compound layer containing light emitting material comprises one or more layers.

6. The display device according to claim 1,

wherein the oxide conductive material is ITO.

7. A display device comprising:

a terminal comprising a first conductive layer and a second conductive layer over a substrate;

a first insulating layer over the second conductive layer;

a second insulating layer over the first insulating layer; and

an organic compound layer containing light emitting material over the second insulating layer,

wherein the second conductive layer comprises oxide conductive material,

wherein part of the second conductive layer is covered with the first insulating layer,

wherein the first insulating layer comprises an organic insulating layer, and

wherein the second insulating layer is in direct contact with the organic compound layer containing light emitting material and the second conductive layer.

8. The display device according to claim 7,

wherein the substrate comprises an organic resin substrate.

9. The display device according to claim 7,

wherein a length of the first conductive layer extended from an edge of the substrate is larger than a length of the second conductive layer extended from the edge of the substrate.

10. The display device according to claim 7,

wherein the first insulating layer comprises a thermosetting material.

11. The display device according to claim 7,

wherein the second insulating layer comprises an inorganic insulation material.

12. The display device according to claim 11,

wherein the inorganic insulation material is selected from the group consisting of a silicon nitride, an aluminum nitride, and an aluminum oxynitride.

13. The display device according to claim 7,

wherein the organic compound layer containing light emitting material comprises one or more layers.

14. The display device according to claim 7,

wherein the oxide conductive material is ITO.

15. A display device comprising:

a terminal comprising a first conductive layer and a second conductive layer over a substrate;

a first insulating layer over the second conductive layer;

a second insulating layer over the first insulating layer;

an organic compound layer containing light emitting material over the second insulating layer; and

a transistor comprising a gate electrode;

wherein the second conductive layer comprises oxide conductive material,

wherein part of the second conductive layer is covered with the first insulating layer,

wherein the first insulating layer comprises an organic insulating layer,

wherein the second insulating layer is in direct contact with the organic compound layer containing light emitting material and the second conductive layer, and

wherein the first conductive layer is formed from a same layer as the gate electrode.

16. The display device according to claim 15,

wherein the substrate comprises an organic resin substrate.

17. The display device according to claim 15,

wherein a length of the first conductive layer extended from an edge of the substrate is larger than a length of the second conductive layer extended from the edge of the substrate.

18. The display device according to claim 15,

wherein the first insulating layer comprises a thermosetting material.

19. The display device according to claim 15,

wherein the second insulating layer comprises an inorganic insulation material.

20. The display device according to claim 19,

wherein the inorganic insulation material is selected from the group consisting of a silicon nitride, an aluminum nitride, and an aluminum oxynitride.

21. The display device according to claim 15,

wherein the organic compound layer containing light emitting material comprises one or more layers.

22. The display device according to claim 15,

wherein the oxide conductive material is ITO.