Semiconductor device
First Claim
1. A semiconductor device comprising:
- a first terminal;
a second terminal;
a functional circuit electrically connected to the first terminal and the second terminal, anda protection circuit electrically connected to the first terminal and the second terminal,wherein the protection circuit comprises;
a diode over an insulating surface, the diode comprising a semiconductor film comprising an n-type impurity region and a p-type impurity region;
a first insulating film over the semiconductor film, the first insulating film having a plurality of first openings and a plurality of second openings;
a first conductive film over the first insulating film;
a second conductive film over the first insulating film;
a second insulating film over the first conductive film and the second conductive film, the second insulating film having a plurality of third openings and a plurality of fourth openings;
a third conductive film over the second insulating film; and
a fourth conductive film over the second insulating film,wherein the n-type impurity region and the first conductive film are electrically connected to each other through the plurality of first openings,wherein the p-type impurity region and the second conductive film are electrically connected to each other through the plurality of second openings,wherein the first conductive film and the third conductive film are electrically connected to each other through the plurality of third openings, andwherein the second conductive film and the fourth conductive film are electrically connected to each other through the plurality of fourth openings.
1 Assignment
0 Petitions
Accused Products
Abstract
To improve the performance of a protection circuit including a diode formed using a semiconductor film. A protection circuit is inserted between two input/output terminals. The protection circuit includes a diode which is formed over an insulating surface and is formed using a semiconductor film. Contact holes for connecting an n-type impurity region and a p-type impurity region of the diode to a first conductive film in the protection circuit are distributed over the entire impurity regions. Further, contact holes for connecting the first conductive film and a second conductive film in the protection circuit are dispersively formed over the semiconductor film. By forming the contact holes in this manner wiring resistance between the diode and a terminal can be reduced and the entire semiconductor film of the diode can be effectively serve as a rectifier element.
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Citations
15 Claims
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1. A semiconductor device comprising:
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a first terminal; a second terminal; a functional circuit electrically connected to the first terminal and the second terminal, and a protection circuit electrically connected to the first terminal and the second terminal, wherein the protection circuit comprises; a diode over an insulating surface, the diode comprising a semiconductor film comprising an n-type impurity region and a p-type impurity region; a first insulating film over the semiconductor film, the first insulating film having a plurality of first openings and a plurality of second openings; a first conductive film over the first insulating film; a second conductive film over the first insulating film; a second insulating film over the first conductive film and the second conductive film, the second insulating film having a plurality of third openings and a plurality of fourth openings; a third conductive film over the second insulating film; and a fourth conductive film over the second insulating film, wherein the n-type impurity region and the first conductive film are electrically connected to each other through the plurality of first openings, wherein the p-type impurity region and the second conductive film are electrically connected to each other through the plurality of second openings, wherein the first conductive film and the third conductive film are electrically connected to each other through the plurality of third openings, and wherein the second conductive film and the fourth conductive film are electrically connected to each other through the plurality of fourth openings. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a first terminal; a second terminal; a functional circuit electrically connected to the first terminal and the second terminal; and a protection circuit, the protection circuit comprising; a diode over a substrate, the diode comprising a semiconductor film having an n-type impurity region and a p-type impurity region; a first insulating film over the semiconductor film, the first insulating film comprising a first electrical connection portion having a plurality of first openings and a second electrical connection portion having a plurality of second openings; a first conductive film over the first insulating film, the first conductive film being electrically connected to the n-type impurity region through the plurality of first openings; a second conductive film over the first insulating film, the second conductive film being electrically connected to the p-type impurity region through the plurality of second openings; a second insulating film over the first conductive film and the second conductive film, the second insulating film comprising a plurality of third electrical connection portions having a plurality of third openings and a plurality of fourth electrical connection portions having a plurality of fourth openings; a third conductive film over the second insulating film, the third conductive film being electrically connected to the first conductive film through the plurality of third openings; and a fourth conductive film over the second insulating film, the fourth conductive film being electrically connected to the second conductive film through the plurality of fourth openings, wherein the third conductive film is electrically connected to the first terminal and the fourth conductive film is electrically connected to the second terminal, wherein the plurality of third electrical connection portions are arranged at larger intervals than intervals at which the plurality of third openings in each the plurality of third electrical connection portions are arranged, wherein the plurality of fourth electrical connection portions are arranged at larger intervals than intervals at which the plurality of fourth openings in each the plurality of fourth electrical connection portions are arranged, wherein the plurality of third electrical connection portions are overlapped with the first electrical connection portion, and wherein the plurality of fourth electrical connection portions are overlapped with the second electrical connection portion. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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Specification