×

Semiconductor device and method of manufacturing semiconductor device

  • US 8,174,066 B2
  • Filed: 08/08/2008
  • Issued: 05/08/2012
  • Est. Priority Date: 08/10/2007
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device comprising:

  • a semiconductor layer;

    a first conductivity type region of a first conductivity type disposed in a base layer portion of the semiconductor layer;

    a body region of a second conductivity type disposed in the semiconductor layer so as to be in contact with the first conductivity type region;

    a trench extending from a surface of the semiconductor layer to pass through the body region so that a deepest portion of the trench reaches the first conductivity type region;

    a gate insulating film disposed on a bottom surface and a side surface of the trench;

    a gate electrode having a gate width, and disposed in the trench on the gate insulating film;

    a source region of the first conductivity type disposed on a side of the trench in a surface layer portion of the semiconductor layer so as to be in contact with the body region;

    a high-concentration region of the second conductivity type disposed in the body region at a position opposed to the trench and having a higher second conductivity type impurity concentration than that of the body region; and

    a channel implant region, containing a first conductivity type impurity, disposed in the body region between the trench and the high-concentration region.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×