Flat-panel display semiconductor process for efficient manufacturing
First Claim
Patent Images
1. A poly-last structure comprising:
- a substrate;
a bottom gate deposited on the substrate;
a dielectric layer deposited on the bottom gate;
a doped source and drain regions deposited on the substrate and formed around the bottom gate; and
a channel silicon precursor layer deposited on a patterned doped amorphous silicon layer and the dielectric layer.
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Abstract
An embodiment is a method and apparatus to fabricate a flat panel display. A poly-last structure is formed for a display panel using an amorphous silicon or amorphous silicon compatible process. The poly-last structure has a channel silicon precursor. The display panel is formed from the poly-last structure using a polysilicon specific or polysilicon compatible process.
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Citations
10 Claims
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1. A poly-last structure comprising:
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a substrate; a bottom gate deposited on the substrate; a dielectric layer deposited on the bottom gate; a doped source and drain regions deposited on the substrate and formed around the bottom gate; and a channel silicon precursor layer deposited on a patterned doped amorphous silicon layer and the dielectric layer. - View Dependent Claims (2, 3, 4)
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5. A flat panel display comprising:
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a substrate; and a thin film transistor (TFT) array having a plurality of TFTs as pixel switching devices on the substrate, each of the TFTs having a bottom gate structure with polycrystalline silicon and data interconnecting lines, the bottom gate structure and the data interconnecting lines being under a silicon layer. - View Dependent Claims (6, 7, 8, 9, 10)
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Specification