Semiconductor device and light-emitting device
First Claim
1. A semiconductor device comprising:
- a transistor;
a first electrode electrically connected to the transistor and serving as an electrode of a light-emitting element, the first electrode comprising a first layer and a second layer formed on the first layer; and
a partition layer covering an end portion of the second layer and having a first opening portion to expose the second layer except for the end portion,wherein the first layer comprises a conductive substance, andwherein the second layer comprises a hole transporting substance and a substance showing electron accepting property to the hole transporting substance.
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Accused Products
Abstract
The present invention provides a semiconductor device by which a light-emitting device that is unlikely to cause defects such as a short circuit, can be manufactured. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer.
26 Citations
10 Claims
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1. A semiconductor device comprising:
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a transistor; a first electrode electrically connected to the transistor and serving as an electrode of a light-emitting element, the first electrode comprising a first layer and a second layer formed on the first layer; and a partition layer covering an end portion of the second layer and having a first opening portion to expose the second layer except for the end portion, wherein the first layer comprises a conductive substance, and wherein the second layer comprises a hole transporting substance and a substance showing electron accepting property to the hole transporting substance. - View Dependent Claims (2, 3, 4, 5)
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6. A semiconductor device comprising:
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a first transistor; a first electrode electrically connected to the first transistor and serving as an electrode of a first light-emitting element; a second transistor; a second electrode electrically connected to the second transistor and serving as an electrode of a second light-emitting element, each of the first and second electrodes comprising a first layer and a second layer formed on the first layer; and a partition layer covering a first end portion of the second layer of the first electrode and a second end portion of the second layer of the second electrode, the partition layer having at least a first opening portion to expose the second layer of the first electrode except for the first end portion and a second opening portion to expose the second layer of the second electrode except for the second end portion, wherein the first layer comprises a conductive substance, wherein the second layer comprises a hole transporting substance and a substance showing electron accepting property to the hole transporting substance, and wherein an emission color of the first light-emitting element is different from an emission color of the second light-emitting element and a thickness of the second layer of the first electrode is different from a thickness of the second layer of the second electrode. - View Dependent Claims (7, 8, 9, 10)
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Specification