Method and system for deactivation of combination EAS/RFID tags

• US 8,174,388 B2
• Filed: 05/21/2009
• Issued: 05/08/2012
• Est. Priority Date: 12/10/2008
• Status: Active Grant

• Current Assignee: Sensormatic Electronics LLC (Johnson Controls International plc)
• Original Assignee: Sensormatic Electronics LLC (Johnson Controls International plc)
• Inventors: Copeland, Richard Loyd, Lian, Ming-Ren
• Primary Examiner(s): PHAM, TOAN NGOC
• Application Number:
  US12/469,775
• Publication Number:
  US 20100141452A1
• Time in Patent Office: 1,083 Days
• Field of Search: 340/572.3, 340/572.1, 340/572.4, 340/572.7, 340/568.1, 340/571, 235/492, 235/375, 235/385
• US Class Current: 340/572.3
• CPC Class Codes: G06K 19/07345 by activating or deactivating at least a part of the circuit on the record carrier, e.g. ON/OFF switches
• CPC Class Codes: G06K 19/07749 the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
• CPC Class Codes: G08B 13/2414 using inductive tags
• CPC Class Codes: G08B 13/2417 having a radio frequency identification chip
• CPC Class Codes: G08B 13/242 Tag deactivation
• CPC Class Codes: G08B 13/2431 Tag circuit details
• CPC Class Codes: G08B 13/2448 Tag with at least dual detection means, e.g. combined inductive and ferromagnetic tags, dual frequencies within a single technology, tampering detection or signalling means on the tag

Abstract

A combination Electronic Article Surveillance/Radio Frequency Identification (“EAS/RFID”) tag and method and system for deactivating said combination EAS/RFID tags without the need to physically contact the tag with a deactivation device. The EAS/RFID tag replaces the conventional diode with a non-linear device such as a capacitor with a given breakdown voltage threshold. Inducing a predetermined voltage across the capacitor results in destruction of the capacitor rendering the EAS/RFID tag undetectable in the interrogation systems.

Claims

1. A combination electronic article surveillance/radio frequency identification (“

EAS/RFID”

) device comprising;

a semiconductor device having an EAS circuit and an RFID circuit;

an antenna circuit in electrical communication with the semiconductor device; and

a capacitor, the capacitor including an insulation layer, wherein application of a predetermined voltage to the capacitor results in electrical breakdown of the insulation layer resulting in permanent deactivation of the EAS/RFID device.

2. The combination EAS/RFID device of claim 1, wherein the capacitor is one of a linear capacitor and a non-linear MOS capacitor and is part of the antenna circuit.

3. The combination EAS/RFID device of claim 1, wherein the capacitor is a linear capacitor and is part of the semiconductor device.

4. The combination EAS/RFID device of claim 1, wherein the capacitor is a non-linear MOS capacitor and is part of the semiconductor device.

5. The combination EAS/RFID device of claim 4, wherein application of the predetermined voltage to the MOS capacitor results in destruction of the MOS capacitor, thereby rendering the combination EAS/RFID device undetectable by an EAS interrogation system.

6. The combination EAS/RFID device of claim 4, further comprising a step-up circuit electrically coupled to the MOS capacitor, the step-up circuit increasing the voltage applied to the MOS capacitor.

7. The combination EAS/RFID device of claim 6, wherein the step-up circuit includes a switch that is activated at a predetermined voltage, making the increased voltage available to the MOS capacitor.

8. The combination EAS/RFID device of claim 1, wherein the predetermined voltage is less than 10 Volts.

9. The combination EAS/RFID device of claim 1, wherein the semiconductor device includes a modulating element.

10. The combination EAS/RFID device of claim 9, wherein the modulating element is a MOSFET.

11. The combination EAS/RFID device of claim 10, wherein the MOSFET has a gate insulation layer that can be broken down upon application of the predetermined voltage.

12. The combination EAS/RFID device of claim 1, wherein the EAS/RFID device is a mixing tag modulated by a combination of high frequency and low frequency signals.

13. A combination electronic article surveillance/radio frequency identification (“

EAS/RFID”

) deactivation system comprising;

a combination EAS/RFID tag, the tag comprising;

a semiconductor device having an EAS circuit and an RFID circuit;

an antenna circuit in electrical communication with the semiconductor device; and

a capacitor, the capacitor including an insulation layer, wherein application of a predetermined voltage to the capacitor results in electrical breakdown of the insulation layer resulting in permanent deactivation of the EAS/RFID device; and

a deactivation device adapted to cause application of the predetermined voltage to the capacitor when the combination EAS/RFID tag is placed in non-contact proximity to the deactivation device.

14. The combination EAS/RFID system of claim 13, wherein the capacitor is part of the antenna circuit.

15. The combination EAS/RFID system of claim 13, wherein the capacitor is part of the semiconductor device.

16. The combination EAS/RFID system of claim 13, wherein the capacitor is a MOS capacitor.

17. The combination EAS/RFID system of claim 13, wherein the predetermined voltage is less than 10 Volts.

18. The combination EAS/RFID system of claim 13, wherein the semiconductor device includes a modulating element.

19. The combination EAS/RFID system of claim 18, wherein the modulating element is a MOSFET.

20. A method of deactivating a combination electronic article surveillance/radio frequency identification (“

EAS/RFID”

) tag without physically contacting the tag, the method comprising;

providing a semiconductor device having an EAS circuit and an RFID circuit;

providing an antenna circuit in electrical communication with the semiconductor device;

providing a capacitor, the capacitor including an insulation layer, and applying a predetermined voltage to the capacitor that results in electrical breakdown of the insulation layer resulting in permanent deactivation of the EAS/RFID device.