Image sensor with controllable transfer gate off state voltage levels

• US 8,174,601 B2
• Filed: 12/19/2008
• Issued: 05/08/2012
• Est. Priority Date: 12/19/2008
• Status: Active Grant

• Current Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Original Assignee: Omnivision Technologies Incorporated (Will Semiconductor Co., Ltd. Shanghai)
• Inventors: Compton, John T., Komori, Hirofumi
• Primary Examiner(s): Tran, Sinh
• Assistant Examiner(s): Nazrul, Shahbaz
• Application Number:
  US12/339,131
• Publication Number:
  US 20100157120A1
• Time in Patent Office: 1,236 Days
• Field of Search: 348/294, 348/308, 348/394
• US Class Current: 348/308
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H04N 25/00 Circuitry of solid-state image sensors [SSIS]; Control thereof
• CPC Class Codes: H04N 25/616 involving a correlated sampling function, e.g. correlated double sampling [CDS] or triple sampling
• CPC Class Codes: H04N 25/63 applied to dark current
• CPC Class Codes: H04N 25/74 Circuitry for scanning or addressing the pixel array

Abstract

A CMOS image sensor or other type of image sensor comprises a pixel array and a signal generator coupled to the pixel array. The pixel array comprises a plurality of pixels each having a photosensitive element coupled to a transfer gate. The signal generator is configured to generate a transfer gate signal for application to at least one of the transfer gates. The transfer gate signal has at least an on state voltage level and first and second off state voltage levels, with the first off state voltage level typically having a higher magnitude than that of the second off state voltage level. In an illustrative embodiment, the second off state voltage level is utilized during a readout operation in order to reduce dark current in floating diffusion regions of the pixel array.

Claims

1. An image sensor comprising:

a pixel array comprising a plurality of pixels each having a photosensitive element coupled to a transfer gate; and

a signal generator coupled to the pixel array;

wherein the signal generator is configured to generate a transfer gate signal for application to at least one of the transfer gates; and

wherein the transfer gate signal has at least an on state voltage level and first and second off state voltage levels, wherein the first off state voltage level has a higher magnitude than that of the second off state voltage level, and wherein the transfer gate signal has the second off state voltage level during readout of one or more of the pixels.

2. The image sensor of claim 1 wherein during said readout of one or more of the pixels the transfer gate signal transitions from the first off state voltage level to the second off state voltage level and then from the second off state voltage level to the on state voltage level.

3. The image sensor of claim 2 wherein after transitioning to the on state voltage level during said readout of one or more of the pixels the transfer gate signal transitions from the on state voltage level back to the second off state voltage level and then from the second off state voltage level back to the first off state voltage level.

4. The image sensor of claim 1 wherein during readout of a given row of pixels of the pixel array the transfer gate signal is applied to each of the transfer gates of the pixels in the given row.

5. The image sensor of claim 4 wherein during readout of the given row of pixels of the pixel array the transfer gate signal is also applied to each of the transfer gates of the pixels in at least one additional row of pixels of the pixel array.

6. The image sensor of claim 1 wherein the transfer gate signal has the second off state voltage level during at least a portion of said readout in which a reset signal is applied to a floating diffusion of said one or more pixels.

7. The image sensor of claim 1 wherein the transfer gate signal has the second off state voltage level during at least a portion of said readout in which a signal on a floating diffusion of said one or more pixels is sampled in response to a sampling signal.

8. The image sensor of claim 1 wherein the signal generator comprises drive circuitry configured to generate the first and second off state voltage levels of the transfer gate signal responsive to an off state voltage level control signal.

9. The image sensor of claim 8 wherein the drive circuitry comprises a switch operative to switch a transfer gate signal line between the first and second off state voltage levels responsive to the off state voltage level control signal.

10. The image sensor of claim 8 wherein said drive circuitry generates first and second off state voltage levels for multiple transfer gate signals of the pixel array.

11. The image sensor of claim 1 wherein the pixels of the pixel array are formed in a well of a first conductivity type on a substrate of a second conductivity type.

12. The image sensor of claim 11 wherein the transfer gate signal is controllably switched between the first and second off state voltage levels by altering a voltage level applied to the well.

13. The image sensor of claim 12 wherein the signal generator comprises drive circuitry configured to control the first and second off state voltage levels of the transfer gate signal by applying respective voltage levels to the well responsive to a well voltage level control signal.

14. A method for use in an image sensor comprising a pixel array having a plurality of pixels each with a photosensitive element coupled to a transfer gate, the method comprising the step of:

generating a transfer gate signal for application to at least one of the transfer gates;

wherein the transfer gate signal has at least an on state voltage level and first and second off state voltage levels, the first off state voltage level having a higher magnitude than that of the second off state voltage level, and

reading out one or more of the pixels while the transfer gate signal has the second off state voltage level.

15. The method of claim 14 wherein the generating step further comprises switching a transfer gate signal line between the first and second off state voltage levels responsive to an off state voltage level control signal.

16. The method of claim 14 wherein the generating step further comprises controllably switching between the first and second off state voltage levels by altering a voltage level applied to a well in which the pixels are formed.

17. A digital imaging device comprising:

an image sensor; and

one or more processing elements configured to process outputs of the image sensor to generate a digital image;

wherein said image sensor comprises;

a pixel array comprising a plurality of pixels each having a photosensitive element coupled to a transfer gate; and

a signal generator coupled to the pixel array;

wherein the signal generator is configured to generate a transfer gate signal for application to at least one of the transfer gates; and

wherein the transfer gate signal has at least an on state voltage level and first and second off state voltage levels, wherein the first off state voltage level has a higher magnitude than that of the second off state voltage level, and wherein the transfer gate signal has the second off state voltage level during readout of one or more of the pixels.

18. The digital imaging device of claim 17 wherein said imaging device comprises a digital camera.

19. The digital imaging device of claim 17, wherein the image sensor is a CMOS image sensor.