High-temperature sensor interface and network

• US 8,176,803 B1
• Filed: 07/29/2008
• Issued: 05/15/2012
• Est. Priority Date: 07/29/2008
• Status: Active Grant

• Current Assignee: Orbital Research, Inc.
• Original Assignee: Orbital Research, Inc.
• Inventors: Shaw, Greg S., Willett, Michael
• Primary Examiner(s): NOLAND, THOMAS
• Application Number:
  US12/220,874
• Time in Patent Office: 1,386 Days
• Field of Search: 73/10.1, 732/041.9, 734/97, 737/08, 7386101-86103, 738/66, 737/66, 340/870.01, 374/1, 374/142, 374/E1.023, 702/1, 702/104, 702/127, 702/189, 702/FOR.158
• US Class Current: 73/866.1
• CPC Class Codes: G01D 21/02 Measuring two or more variables by means not covered by a single other subclass
• CPC Class Codes: G01D 3/0365 the undesired influence being measured using a separate sensor, which produces an influence related signal

Abstract

The present invention is a sensor interface or network of interfaces that utilizes high-temperature electronics to operate at elevated temperatures for applications that include but are not limited to aircraft and automobile engines, vehicle frames, refineries, nuclear and chemical production plants, and in downhole drilling for petroleum and natural gas. The interface or network provide connectors for a variety of sensors with analog and digital outputs, and can in turn provide data to an automated electronic control system or a monitor. Because the sensor interface may be placed in so-called “hot zones” nearer to the sensors being monitored than other systems that use conventional electronics, the sensor interface can increase noise immunity, increase reliability, decrease cost, reduce weight, and increase space.

Claims

1. A sensor interface comprising

at least one sensor connector for connecting a sensor having an analog signal;

a microprocessor fabricated using a silicon-on-insulator (SOI) process capable of operating at temperatures greater than at least 275°

C. and at clock speeds of more than about 8 MHz for modifying the analog signal; and

a communication device for transmitting a modified and digitally converted signal to a receiving device.

2. The sensor interface of claim 1, wherein the microprocessor clock speed is more than about 16 MHz.

3. The sensor interface of claim 1, wherein the microprocessor clock speed is more than about 32 MHz.

4. The sensor interface of claim 1 further comprising at least one differential input adapted to accept analog voltage or current signals from a sensor connected to the at least one sensor connector.

5. The sensor interface of claim 1 further comprising at least two differential inputs adapted to accept analog voltage or current signals from a sensor that requires more than one differential input connected to the at least one sensor connector.

6. The sensor interface of claim 5, wherein the sensor that requires more than one differential input is a linear variable differential transformer (LVDT).

7. The sensor interface of claim 1, wherein the receiving device is a FADEC.

8. The sensor interface of claim 1, further comprising a temperature sensor for automatic sensor calibration.

9. The sensor interface of claim 1, wherein the sensor interface further comprises an output to at least one of the sensors for excitation or communication with the at least one sensor.

10. A sensor interface comprising

at least one sensor connector for connecting a sensor having an analog signal;

a microprocessor fabricated using a silicon-on-insulator (SOI) process capable of operating at temperatures greater than at least 135°

C. and at clock speeds of more than about 125 MHz for modifying the analog signal; and

a communication device for transmitting a modified and digitally converted signal to a receiving device.

11. The sensor interface of claim 10, wherein the microprocessor clock speed is more than about 250 MHz.

12. The sensor interface of claim 10, wherein the microprocessor clock speed is more than about 500 MHz.

13. The sensor interface of claim 10, wherein the microprocessor is capable of operating at temperatures greater than at least 200°

C.

14. The sensor interface of claim 10, wherein the microprocessor is capable of operating at temperatures greater than at least 275°

C.

15. The sensor interface of claim 10, wherein the communication device is a controller area network (CAN) interface.

16. The sensor interface of claim 10, wherein the receiving device is a FADEC.

17. The sensor interface of claim 10, further comprising a temperature sensor for automatic sensor calibration.

18. The sensor interface of claim 10, wherein the sensor interface further comprises an output to at least one of the sensors for excitation or communication with the at least one sensor.

19. A sensor interface comprising

at least one sensor connector for connecting a sensor having an analog signal;

a microprocessor fabricated using a silicon-on-insulator (SOI) process capable of operating at temperatures greater than at least 135°

C. and at clock speeds of more than about 8 MHz for modifying the analog signal;

a communication device for transmitting a modified and digitally converted signal to a receiving device; and

an enclosure that encloses at least the microprocessor and the communication device,

wherein the enclosure, microprocessor and communication device are capable of reliable operation at vibrations of 60 g'"'"'s at a frequency of 4,000 Hz.

20. The sensor interface of claim 19, wherein the enclosure, microprocessor and communication device are capable of reliable operation at vibrations of 150 g'"'"'s at a frequency of 7,500 Hz.

21. The sensor interface of claim 19, wherein the enclosure, microprocessor and communication device are capable of reliable operation at vibrations of 300 g'"'"'s at a frequency of 10,000 Hz.

22. The sensor interface of claim 19, wherein the microprocessor is capable of operating at temperatures greater than at least 275°

C.