Microfluidic devices with SPR sensing capabilities

• US 8,178,046 B2
• Filed: 02/23/2005
• Issued: 05/15/2012
• Est. Priority Date: 02/23/2005
• Status: Active Grant

• Current Assignee: Bruker Daltonik GmbH (Bruker Corporation)
• Original Assignee: Sierra Sensors GmbH (Bruker Corporation)
• Inventors: Robotti, Karla, Roitman, Daniel B., Killeen, Kevin
• Primary Examiner(s): Bullock, In Suk
• Assistant Examiner(s): Kingan, Timothy G
• Application Number:
  US11/064,575
• Publication Number:
  US 20060188401A1
• Time in Patent Office: 2,638 Days
• Field of Search: None
• US Class Current: 422/82.05
• CPC Class Codes: B01L 2300/0654 Lenses; Optical fibres
• CPC Class Codes: B01L 2400/0475 specific mechanical means and fluid pressure
• CPC Class Codes: B01L 2400/0622 distribution valves, valves having multiple inlets and/or outlets, e.g. metering valves, multi-way valves
• CPC Class Codes: B01L 2400/0644 rotary valves
• CPC Class Codes: B01L 3/502715 characterised by interfacing components, e.g. fluidic, electrical, optical or mechanical interfaces
• CPC Class Codes: G01N 21/553 and using surface plasmons fluorescence excitation G01N21/648; enhanced Raman G01N21/658

Abstract

A microfluidic system including a chip sensor and an SPR optical detector. The chip sensor may be made a non-transparent material, such as polyimide or silicon, allowing non-visible radiation produced by the SPR optical detector to pass through and interact with a surface plasmon generating layer on the chip sensor.

Claims

1. A SPR system, comprising:

a sensor chip comprising a sensor substrate, a channel, an upper channel surface, a lower channel surface and a side channel surface;

and an optical detector, said optical detector configured to generate non-visible radiation in a predetermined wavelength detection range and to direct said radiation towards the sensor substrate, wherein the channel contains a surface plasmon generating film, the sensor substrate comprising a material that is not transparent to visible light but is substantially transparent to non-visible radiation.

2. The SPR system of claim 1, wherein at least a portion of the sensor chip in or adjacent the channel contains the surface plasmon generating film.

3. The SPR system of claim 1, further comprising affinity media connected to the surface plasmon generating film.

4. The SPR system of claim 1, further comprising chromatographic separation media at least one of (i) adjacent the surface plasmon generating film and (ii) downstream from the surface plasmon generating film.

5. The SPR system of claim 1, wherein the sensor substrate is made from polyimide.

6. The SPR system of claim 5, wherein the optical detector is configured to generate radiation having a wavelength greater than or equal to approximately 700 nm.

7. The SPR system of claim 1, wherein the sensor substrate is made from silicon.

8. The SPR system of claim 7, wherein the optical detector is configured to generate radiation having a wavelength greater than or equal to approximately 1100 nm.

9. The SPR system of claim 1, wherein the optical detector further includes a detector configured to detect the radiation after it has reflected from the surface plasmon generating film.

10. The SPR system of claim 9, wherein the detector is a silicon based detector.

11. The SPR system of claim 10, wherein the silicon based detector includes one of a PIN diode, CMOS chip and a CCD array.

12. The SPR system of claim 9, wherein the detector is an infrared photodetector.

13. The SPR system of claim 12, wherein the infrared photodetector comprises an InGaAs sensor.

14. The SPR system of claim 2, further including a pump for pumping sample for analysis through the channel.

15. A sensor chip, comprising:

a channel comprising a substrate, an upper channel surface, a lower channel surface and a side channel surface, wherein said channel contains a surface plasmon generating film, and the substrate comprising a material that is not transparent to visible radiation but is substantially transparent to radiation having a predetermined wavelength in at least a portion of the non-visible wavelength range.

16. The sensor chip of claim 15, wherein the substrate includes at least one channel and the surface plasmon generating film is located in or adjacent said channel.

17. The sensor chip of claim 15, wherein the substrate includes multiple layers adhered together.

18. The sensor chip of claim 15, further comprising affinity media connected to the surface plasmon generating film.

19. The sensor chip of claim 16, further comprising chromatographic separation media in the at least one channel connected to the surface plasmon generating film.

20. The sensor chip of claim 15, wherein the substrate is made from polyimide.

21. The sensor chip of claim 15, wherein the substrate is made from silicon.

22. A method for using a microfluidic system for SPR analysis, said microfluidic system comprising a sensor chip and an optical detector, said sensor chip comprising a channel, an upper channel surface, a lower channel surface and a side channel surface, wherein the channel contains a surface plasmon generating film, said optical detector generating non-visible radiation in a predetermined wavelength detection range and being configured to direct said radiation towards the sensor chip, the sensor chip being made from a material that is not transparent but allowing radiation in the predetermined wavelength detection range to pass through to the surface plasmon generating film, said method comprising:

passing a solution of interest through the channel; and

passing non-visible radiation generated by the optical detector through the sensor chip towards the surface plasmon generating film.

23. The method of claim 22, wherein the sensor chip includes an affinity media attached to the surface plasmon generating film.

24. The method of claim 22, wherein the sensor chip includes chromatographic separation media connected to the surface plasmon generating film.

25. The method of claim 22, wherein the sensor chip is made from polyimide and a lower value of the predetermined wavelength range is 700 nm.

26. The method of claim 22, wherein the sensor chip is made from one of polyimide and silicon and a lower value of the predetermined wavelength range is 1100 nm.