Manufacturing method of display device
First Claim
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1. A method for manufacturing a display device comprising the steps of:
- providing a substrate in a treatment chamber;
supplying a reactive gas to the treatment chamber;
supplying a microwave from a first slit formed on a side surface of a first waveguide and a second slit formed on a side surface of a second waveguide to a region between the first waveguide and the second waveguide;
generating plasma at the region by using a plasma generator provided between the first waveguide and the second waveguide; and
forming a microcrystalline semiconductor layer over the substrate placed in the treatment chamber,wherein the first waveguide and the second waveguide are provided in the treatment chamber and are aligned in parallel to each other, andwherein the first slit and the second slit are provided so as to face each other.
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Abstract
To improve a deposition rate of a microcrystalline semiconductor layer by using a deposition method and to improve productivity of a display device including a TFT of a microcrystalline semiconductor, a reactive gas containing helium is supplied to a treatment chamber surrounded with a plurality of juxtaposed waveguides and a wall surface; a microwave is supplied to a space which is interposed between juxtaposed waveguides to generate plasma while the pressure of the treatment chamber is held at an atmospheric pressure or a sub-atmospheric pressure typically a pressure of 1×102 Pa or more and 1×105 Pa or less; and a microcrystalline semiconductor layer is deposited over a substrate placed in the treatment chamber. High density plasma is generated by providing slits on sides of the plurality of juxtaposed waveguides which face to another waveguide and supplying a microwave into the treatment chamber through the slit.
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Citations
26 Claims
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1. A method for manufacturing a display device comprising the steps of:
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providing a substrate in a treatment chamber; supplying a reactive gas to the treatment chamber; supplying a microwave from a first slit formed on a side surface of a first waveguide and a second slit formed on a side surface of a second waveguide to a region between the first waveguide and the second waveguide; generating plasma at the region by using a plasma generator provided between the first waveguide and the second waveguide; and forming a microcrystalline semiconductor layer over the substrate placed in the treatment chamber, wherein the first waveguide and the second waveguide are provided in the treatment chamber and are aligned in parallel to each other, and wherein the first slit and the second slit are provided so as to face each other. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method for manufacturing a display device comprising the steps of:
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providing a substrate in a treatment chamber; supplying a reactive gas to the treatment chamber; forming a gate insulating layer; supplying a microwave from a first slit formed on a side surface of a first waveguide and a second slit formed on a side surface of a second waveguide to a region between the first waveguide and the second waveguide; generating plasma at the region by using a plasma generator provided between the first waveguide and the second waveguide; forming a microcrystalline semiconductor layer over the substrate placed in the treatment chamber; and forming an impurity semiconductor layer, wherein the first waveguide and the second waveguide are provided in the treatment chamber and are aligned in parallel to each other, wherein the first slit and the second slit are provided so as to face each other, wherein the gate insulating layer, the microcrystalline semiconductor layer, and the impurity semiconductor layer are successively formed over a gate electrode, and wherein interfaces among the gate insulating layer, the microcrystalline semiconductor layer, and the impurity semiconductor layer are not exposed to atmosphere. - View Dependent Claims (9, 10, 11, 12, 13)
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14. A method for manufacturing a display device comprising the steps of:
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providing a substrate in a treatment chamber; supplying a reactive gas containing a rare gas to the treatment chamber; supplying a microwave from a first slit formed on a side surface of a first waveguide and a second slit formed on a side surface of a second waveguide to a region between the first waveguide and the second waveguide; generating plasma at the region by using a plasma generator provided between the first waveguide and the second waveguide; forming a microcrystalline semiconductor layer over the substrate placed in the treatment chamber; and separating the rare gas from the reactive gas passed through the treatment chamber, wherein the first waveguide and the second waveguide are provided in the treatment chamber and are aligned in parallel to each other, and wherein the first slit and the second slit are provided so as to face each other. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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21. A method for manufacturing a display device comprising the steps of:
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providing a substrate in a treatment chamber; supplying a reactive gas containing a rare gas to the treatment chamber; forming a gate insulating layer; supplying a microwave from a first slit formed on a side surface of a first wavequide and a second slit formed on a side surface of a second wavequide to a region between the first wavequide and the second wavequide; generating plasma at the region by using a plasma generator provided between the first wavequide and the second wavequide; forming a microcrystalline semiconductor layer over the substrate placed in the treatment chamber; forming an impurity semiconductor layer; and separating the rare gas from the reactive gas passed through the treatment chamber, wherein the first wavequide and the second wavequide are provided in the treatment chamber and are aligned in parallel to each other, wherein the first slit and the second slit are provided so as to face each other, wherein the gate insulating layer, the microcrystalline semiconductor layer, and the impurity semiconductor layer are successively formed over a gate electrode, and wherein interfaces among the gate insulating layer, the microcrystalline semiconductor layer, and the impurity semiconductor layer are not exposed to atmosphere. - View Dependent Claims (22, 23, 24, 25, 26)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsYamazaki, Shunpei, Arai, Yasuyuki
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Primary Examiner(s)Nguyen, Khiem D
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Application NumberUS12/219,244Publication NumberTime in Patent Office1,397 DaysField of Search438/149, 438/150, 438/151, 257/E51.005, 118/723.MWUS Class Current438/149CPC Class CodesC23C 16/511 using microwave dischargesH01J 37/32192 Microwave generated dischar...
