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Asymmetric barrier diode

  • US 8,178,864 B2
  • Filed: 11/18/2008
  • Issued: 05/15/2012
  • Est. Priority Date: 11/18/2008
  • Status: Expired due to Fees
First Claim
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1. A diode comprising:

  • a reference voltage electrode;

    a variable voltage electrode; and

    a diode material dispersed between the reference voltage electrode and the variable voltage electrode, the diode material comprising at least three layers of high-K dielectric material and having an asymmetric energy barrier between the reference voltage electrode and the variable voltage electrode, the energy barrier having a relatively maximum energy barrier level located proximate the reference voltage electrode and a minimum energy barrier level located proximate the variable voltage electrode, the at least three layers positioned with the high-K dielectric material having the highest conduction band offset located proximate the reference voltage electrode and the high-k dielectric material having the lowest conduction band offset located proximate the variable voltage electrode.

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