Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same

• US 8,178,884 B2
• Filed: 02/26/2009
• Issued: 05/15/2012
• Est. Priority Date: 07/08/2008
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Electronics Co. Ltd.)
• Original Assignee: Samsung Mobile Display Company Limited (Samsung Electronics Co. Ltd.)
• Inventors: Ha, Jae-Heung, Song, Young-Woo, Lee, Jong-Hyuk, Jeong, Jong-Han, Kim, Min-Kyu, Mo, Yeon-Gon, Jeong, Jae-Kyeong, Chung, Hyun-Joong, Kim, Kwang-Suk, Yang, Hui-Won, Choi, Chaun-Gi
• Primary Examiner(s): Soward, Ida M
• Application Number:
  US12/393,422
• Publication Number:
  US 20100006833A1
• Time in Patent Office: 1,174 Days
• Field of Search: 257/57, 257/66, 257/69, 257/79, 257/E29.151, 257/59, 257/72, 257/291
• US Class Current: 257/72
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.

Claims

1. A thin film transistor, comprising:

a substrate;

a gate electrode formed on the substrate;

a gate insulating film formed on the gate electrode and the substrate;

an activation layer formed on the gate insulating layer and insulated from the gate electrode by the gate insulating film, the activation layer comprising, a compound semiconductor oxide or zinc oxide (ZnO);

a passivation layer formed on the activation layer, comprising an inorganic oxide comprising at least one metal comprised in the activation layer; and

source and drain electrodes that contact the activation layer,

wherein the inorganic oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof.

2. The thin film transistor as claimed in claim 1, wherein the source and drain electrodes contact the activation layer, through contact holes formed in the passivation layer.

3. The thin film transistor as claimed in claim 1, wherein the compound semiconductor oxide comprises ZnO doped with at least one of gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), and vanadium (V).

4. The thin film transistor as claimed in claim 1, wherein the inorganic oxide and the compound semiconductor oxide comprise the same type of metal.

5. The thin film transistor as claimed in claim 1, wherein the compound semiconductor oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof.

6. The thin film transistor as claimed in claim 1, further comprising a buffer layer formed between the substrate and the gate electrode.

7. A thin film transistor, comprising:

a substrate;

a gate electrode formed on the substrate;

a gate insulating film formed on the gate electrode and the substrate;

an activation layer formed on the gate insulating layer, adjacent to the gate electrode, the activation layer comprising a compound semiconductor oxide or zinc oxide (ZnO);

a passivation layer formed on the activation layer, comprising an inorganic oxide comprising at least one metal comprised in the activation layer; and

source and drain electrodes that contact the activation layer,

wherein the inorganic oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof.

8. The thin film transistor of claim 7, wherein the band gap of the passivation layer is no larger than the band gap of the activation layer.

9. The thin film transistor of claim 7, wherein the compound semiconductor oxide comprises ZnO doped with at least one of gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), and vanadium (V).