Thin film transistor including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same
First Claim
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1. A thin film transistor, comprising:
- a substrate;
a gate electrode formed on the substrate;
a gate insulating film formed on the gate electrode and the substrate;
an activation layer formed on the gate insulating layer and insulated from the gate electrode by the gate insulating film, the activation layer comprising, a compound semiconductor oxide or zinc oxide (ZnO);
a passivation layer formed on the activation layer, comprising an inorganic oxide comprising at least one metal comprised in the activation layer; and
source and drain electrodes that contact the activation layer,wherein the inorganic oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof.
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Abstract
A thin film transistor, a method of manufacturing the thin film transistor, and a flat panel display device including the thin film transistor. The thin film transistor includes: a gate electrode formed on a substrate; a gate insulating film formed on the gate electrode; an activation layer formed on the gate insulating film; a passivation layer including a compound semiconductor oxide, formed on the activation layer; and source and drain electrodes that contact the activation layer.
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Citations
9 Claims
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1. A thin film transistor, comprising:
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a substrate; a gate electrode formed on the substrate; a gate insulating film formed on the gate electrode and the substrate; an activation layer formed on the gate insulating layer and insulated from the gate electrode by the gate insulating film, the activation layer comprising, a compound semiconductor oxide or zinc oxide (ZnO); a passivation layer formed on the activation layer, comprising an inorganic oxide comprising at least one metal comprised in the activation layer; and source and drain electrodes that contact the activation layer, wherein the inorganic oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A thin film transistor, comprising:
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a substrate; a gate electrode formed on the substrate; a gate insulating film formed on the gate electrode and the substrate; an activation layer formed on the gate insulating layer, adjacent to the gate electrode, the activation layer comprising a compound semiconductor oxide or zinc oxide (ZnO); a passivation layer formed on the activation layer, comprising an inorganic oxide comprising at least one metal comprised in the activation layer; and source and drain electrodes that contact the activation layer, wherein the inorganic oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof. - View Dependent Claims (8, 9)
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Specification