Semiconductor device having floating body element and bulk body element
First Claim
Patent Images
1. A semiconductor device comprising:
- a substrate including a bulk body element region and a floating body element region;
an isolation region defining an active region of the bulk body element region of the substrate and defining first buried patterns and first active patterns, which are sequentially stacked on a first element region of the floating body element region of the substrate;
a first buried dielectric layer between the first buried patterns and the substrate and between the first buried patterns and the first active patterns; and
at least one first connection that connects the first buried patterns to each other, wherein the first connection is at a level of the first buried patterns, wherein the first connection includes a thickness that is substantially the same as the first buried patterns, and wherein the first buried dielectric layer is between the first connection and the substrate.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device having a floating body element and a bulk body element and a manufacturing method thereof are provided. The semiconductor device includes a substrate having a bulk body element region and floating body element regions. An isolation region defining an active region of the bulk body element region of the substrate and defining first buried patterns and first active patterns, which are sequentially stacked on a first element region of the floating body element regions of the substrate is provided. A first buried dielectric layer interposed between the first buried patterns and the substrate and between the first buried patterns and the first active patterns is provided.
-
Citations
19 Claims
-
1. A semiconductor device comprising:
-
a substrate including a bulk body element region and a floating body element region; an isolation region defining an active region of the bulk body element region of the substrate and defining first buried patterns and first active patterns, which are sequentially stacked on a first element region of the floating body element region of the substrate; a first buried dielectric layer between the first buried patterns and the substrate and between the first buried patterns and the first active patterns; and at least one first connection that connects the first buried patterns to each other, wherein the first connection is at a level of the first buried patterns, wherein the first connection includes a thickness that is substantially the same as the first buried patterns, and wherein the first buried dielectric layer is between the first connection and the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
-
-
12. A semiconductor device comprising:
-
buried patterns on a substrate; at least one connection extending from the buried patterns and connecting the buried patterns to each other; active patterns on the buried patterns; a buried dielectric layer between the buried patterns and the substrate, between the buried patterns and the active patterns, between the at least one connection and the substrate and between the at least one connection and the active patterns; and at least one gate structure directly on the active patterns, wherein the at least one connection includes a thickness that is substantially the same as the buried patterns, and wherein the buried dielectric layer is between the at least one connection and the substrate. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
-
Specification