Thin film field effect transistor and display
First Claim
1. A thin film field effect transistor comprising at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on a substrate, wherein an electric resistance layer is provided between the active layer and at least one of the source electrode or the drain electrode,the electric resistance layer has an electric conductivity lower than that of the active layer,the active layer includes an oxide semiconductor,the electric resistance layer is thicker than the active layer,the electric resistance layer includes an oxide semiconductor, anda ratio of a thickness of the electric resistance layer to that of the active layer is more than 1 and less than or equal to 10.
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Abstract
A thin film field effect transistor including, on a substrate, at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, wherein an electric resistance layer is provided in electric connection between the active layer and at least one of the source electrode or the drain electrode.
105 Citations
13 Claims
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1. A thin film field effect transistor comprising at least a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode on a substrate, wherein an electric resistance layer is provided between the active layer and at least one of the source electrode or the drain electrode,
the electric resistance layer has an electric conductivity lower than that of the active layer, the active layer includes an oxide semiconductor, the electric resistance layer is thicker than the active layer, the electric resistance layer includes an oxide semiconductor, and a ratio of a thickness of the electric resistance layer to that of the active layer is more than 1 and less than or equal to 10.
Specification