Passive capacitively-coupled electrostatic (CCE) probe arrangement for detecting plasma instabilities in a plasma processing chamber
First Claim
1. An arrangement for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing, comprising:
- a probe arrangement, wherein said probe arrangement is disposed on a surface of said processing chamber and is configured to measure at least one plasma processing parameter, wherein said probe arrangement includesa plasma-facing sensor, anda measuring capacitor, wherein said plasma-facing sensor is coupled to a first plate of said measuring capacitor; and
a detection arrangement, said detection arrangement is coupled to a second plate of said measuring capacitor, wherein said detection arrangement is configured to convert an induced current flowing through said measuring capacitor into a set of digital signals, said set of digital signals being processed to detect said plasma instability.
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Abstract
An arrangement for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing is provided. The arrangement includes a probe arrangement, wherein the probe arrangement is disposed on a surface of the processing chamber and is configured to measure at least one plasma processing parameter. The probe arrangement includes a plasma-facing sensor and a measuring capacitor, wherein the plasma-facing sensor is coupled to a first plate of the measuring capacitor. The arrangement also includes a detection arrangement, which is coupled to a second plate of the measuring capacitor. The detection arrangement is configured to convert an induced current flowing through the measuring capacitor into a set of digital signals, the set of digital signals being processed to detect the plasma instability.
55 Citations
13 Claims
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1. An arrangement for detecting plasma instability within a processing chamber of a plasma processing system during substrate processing, comprising:
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a probe arrangement, wherein said probe arrangement is disposed on a surface of said processing chamber and is configured to measure at least one plasma processing parameter, wherein said probe arrangement includes a plasma-facing sensor, and a measuring capacitor, wherein said plasma-facing sensor is coupled to a first plate of said measuring capacitor; and a detection arrangement, said detection arrangement is coupled to a second plate of said measuring capacitor, wherein said detection arrangement is configured to convert an induced current flowing through said measuring capacitor into a set of digital signals, said set of digital signals being processed to detect said plasma instability. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification