Transflective type liquid crystal display device having a color layer in the transmissive region and a non-color layer in the reflective region and fabricating method thereof

• US 8,179,505 B2
• Filed: 11/21/2005
• Issued: 05/15/2012
• Est. Priority Date: 12/23/2004
• Status: Active Grant

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Display Co., Ltd.
• Inventors: Ahn, Byung Chul, Lim, Joo Soo
• Primary Examiner(s): Nguyen, Lauren
• Application Number:
  US11/282,476
• Publication Number:
  US 20060139517A1
• Time in Patent Office: 2,367 Days
• Field of Search: 349/106, 349113-114, 349/108, 349/110
• US Class Current: 349/114
• CPC Class Codes: G02F 1/133512 Light shielding layers, e.g. black matrix G02F1/136209 takes precedence
• CPC Class Codes: G02F 1/133514 Colour filters
• CPC Class Codes: G02F 1/133555 Transflectors

Abstract

A liquid crystal display device according to an embodiment of the present invention includes a black matrix on a first substrate to divide a pixel area having a reflection area and a transmission area; a color layer in the transmission area of the pixel area provided by the black matrix; and a non-color layer in the reflection area of the pixel area.

Claims

1. A transflective type liquid crystal display device, comprising:

a black matrix formed on a first substrate to define a pixel area having a reflection area and a transmission area in each of a plurality of pixels;

a color filter formed only on the transmission area to have an aperture in the reflection area, wherein the color filter has substantially the same size in each of the pixels;

a white color layer formed on the first substrate on which the black matrix and the color filter are formed, wherein the white color layer has an evenness surface and contacts with the first substrate in the aperture in the reflection area;

a gate electrode formed on a second substrate;

a gate insulation film formed on the second substrate to cover the gate electrode;

a semiconductor layer formed on the gate insulation film to be overlapped with the gate electrode;

source and drain electrodes formed on the semiconductor layer;

a first insulation film formed on the gate insulation film to cover the source and drain electrodes;

a second insulation film formed on the first insulation film in an embossing shape;

a reflection electrode formed on the second insulation film only in the reflection area;

a third insulation film formed on the reflection electrode and the second insulation film; and

a pixel electrode formed on the third insulation film in the transmission area and the reflection area,

wherein the reflection area displays a black and white while the transmission area displays chromatic color, and

wherein a total thickness of the black matrix and the white color layer in the reflection area is the same as that of the color filter and the white color layer in the transmission area.

2. The device according to claim 1, wherein the white color layer includes an overcoat layer that is formed over the whole pixel area to cover the color filter and the black matrix.

3. The device according to claim 2, wherein the overcoat layer is formed of an acrylic resin.

7. The device according to claim 1, wherein the pixel electrode is directly contacted with the drain electrode without contacting with the reflection electrode via a contact hole penetrating the first, second and third insulation films.

4. A method of fabricating a transflective type liquid crystal display device, comprising:

forming a black matrix on a first substrate to define a pixel area having a reflection area and a transmission area in each of a plurality of pixels;

forming a color filter on only the transmission area to have an aperture in the reflection area, wherein the color filter has substantially the same size in each of the pixels;

forming a white color layer on the first substrate on which the black matrix and the color filter are formed, wherein the white color layer has an evenness surface and contacts with the first substrate in the aperture in the reflection area;

forming a gate electrode on a second substrate;

forming a gate insulation film on the second substrate to cover the gate electrode;

forming a semiconductor layer on the gate insulation film to be overlapped with the gate electrode;

forming source and drain electrodes on the semiconductor layer;

forming a first insulation film on the gate insulation film to cover the source and drain electrodes;

forming a second insulation film on the first insulation film in an embossing shape;

forming a reflection electrode on the second insulation film only in the reflection area;

forming a third insulation film on the reflection electrode and the second insulation film;

and

forming a pixel electrode on the third insulation film in the transmission area and the reflection area,

wherein the reflection area displays a black and white while the transmission area displays chromatic color, and

wherein a total thickness of the black matrix and the white color layer in the reflection area is the same as that of the color filter and the white color layer in the transmission area.

5. The method according to claim 4, wherein forming the white color layer includes:

forming an overcoat layer over the whole pixel area to cover the color filter and the black matrix.

6. The method according to claim 5, wherein the overcoat layer is formed of an acrylic resin.

8. The method according to claim 4, wherein pixel electrode is directly contacted with the drain electrode without contacting with the reflection electrode via a contact hole penetrating the first, second and third insulation films.