Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device

• US 8,179,938 B2
• Filed: 09/14/2009
• Issued: 05/15/2012
• Est. Priority Date: 09/16/2008
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Yu-Sik
• Primary Examiner(s): Booth, Richard A.
• Application Number:
  US12/584,857
• Publication Number:
  US 20100065881A1
• Time in Patent Office: 974 Days
• Field of Search: 438 21- 47, 372 4301- 5023
• US Class Current: 372/43.01
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45139 Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12044 OLED
• CPC Class Codes: H01L 2924/207 Diameter ranges
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding
• CPC Class Codes: H01L 33/12 with a stress relaxation structure, e.g. buffer layer
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A light-emitting element capable of increasing the amount of light emitted, a light-emitting device including the same, and a method of manufacturing the light-emitting element and the light-emitting device include a buffer layer having an uneven pattern formed thereon; a light-emitting structure including a first conductive pattern of a first conductivity type that is conformally formed along the buffer layer having the uneven pattern formed thereon, a light-emitting pattern that is conformally formed along the first conductive pattern, and a second conductive pattern of a second conductivity type that is formed on the light-emitting pattern; a first electrode electrically connected to the first conductive pattern; and a second electrode electrically connected to the second conductive pattern.

Claims

1. A light-emitting element comprising:

a buffer layer having an uneven pattern formed thereon;

a light-emitting structure including a first conductive pattern of a first conductivity type that is conformally formed along the buffer layer having the uneven pattern formed thereon, a light-emitting pattern that is conformally formed along the first conductive pattern, and a second conductive pattern of a second conductivity type that is formed on the light-emitting pattern;

a first electrode electrically connected to the first conductive pattern; and

a second electrode electrically connected to the second conductive pattern.

2. The light-emitting element of claim 1, wherein at least a portion of the cross-section of the uneven pattern is curved.

3. The light-emitting element of claim 2, wherein the uneven pattern has a semicircular shape in a cross-sectional view.

4. The light-emitting element of claim 1, wherein the uneven pattern includes a plurality of periodic patterns.

5. The light-emitting element of claim 1, wherein the uneven pattern is at least one of a dot pattern, a line pattern, and a mesh pattern.

6. The light-emitting element of claim 1, wherein the second conductive pattern is conformally formed along the light-emitting pattern.

7. The light-emitting element of claim 1, wherein the second conductive pattern has a flat upper surface.

8. The light-emitting element of claim 1, wherein the side wall of the light-emitting structure is inclined.

9. The light-emitting element of claim 1, wherein the width of the first conductive pattern is larger than that of the second conductive pattern and the light-emitting pattern such that a portion of the first conductive pattern protrudes from the second conductive pattern and the light-emitting pattern in a lateral direction.

10. The light-emitting element of claim 9, wherein the first electrode is formed on a protruding portion of the first conductive pattern, and the second electrode is formed on the upper surface and/or the side wall of the light-emitting structure.

11. The light-emitting element of claim 1, wherein the second electrode is a reflecting electrode, and the second electrode is formed on the upper surface and the side wall of the light-emitting structure.

16. A light-emitting device comprising the light-emitting element according to claim 1.

12. A light-emitting element comprising:

a conductive substrate;

a first electrode having a bowl shape and formed on the conductive substrate;

a light-emitting structure including a first conductive pattern of a first conductivity type, a light-emitting pattern, and a second conductive pattern of a second conductivity type sequentially formed in the first electrode;

a buffer layer formed on the light-emitting structure; and

a second electrode formed on the buffer layer,

wherein an uneven pattern is formed on the buffer layer, the second conductive pattern is conformally formed along the buffer layer, and the light-emitting pattern is conformally formed along the second conductive pattern.

13. The light-emitting element of claim 12, wherein at least a portion of the cross-section of the uneven pattern is curved.

14. The light-emitting element of claim 12, wherein the buffer layer is formed such that a portion of the second conductive pattern is exposed, an ohmic layer is formed on the exposed region of the second conductive pattern, and the second electrode is formed on the ohmic layer.

15. The light-emitting element of claim 12, wherein the bowl-shaped first electrode includes a protrusion that protrudes from the lower side thereof, the light-emitting structure is divided into two sides by the protrusion, and the second electrode is formed on one side of the light-emitting structure.

17. A light emitting element comprising:

a substrate;

a light emitting structure on the substrate, wherein the light emitting structure comprises;

a first conductive layer of P-type material comprising A1GaN;

a light emitting layer on the first conductive layer, wherein the light emitting layer comprises a multiple quantum well structure; and

a second conductive layer of N-type material on the light emitting layer, wherein the second conductive layer has an uneven surface pattern thereon and wherein the second conductive layer comprises InGaN;

an insulating layer between the substrate and the first conductive layer, said insulating layer having at least one opening therethrough, wherein first and second biases are respectively applied to the first and second conductive layers through the at least one opening;

a first metal layer electrically connected through the at least one opening to the first conductive layer, wherein the first metal layer comprises an Ag layer and an Au layer; and

a second metal layer electrically connected through the at least one opening to the second conductive layer, wherein the second metal layer comprises Al and Au.

18. The light emitting element of claim 17, wherein the insulating layer comprises silicon nitride.

19. The light emitting element of claim 18, further comprising a phosphor layer.

20. The light emitting element of claim 19, further comprising a first transparent resin layer surrounding the phosphor layer.

21. The light emitting element of claim 20, wherein the first transparent resin layer comprises a silicon resin.

22. The light emitting element of claim 21, further comprising a second transparent resin layer surrounding the first transparent resin layer.

23. The light emitting element of claim 22, wherein the second transparent resin layer has a lens shape.

24. The light emitting element of claim 23, wherein the second transparent resin layer comprises a silicon resin.

25. The light emitting element of claim 17, wherein the light emitting element is of a flip-chip type.