Method of fabricating semiconductor substrate and method of fabricating light emitting device
First Claim
1. A method of fabricating a light emitting device, the method comprising:
- forming a first semiconductor layer on a first substrate;
forming a second semiconductor layer on the first semiconductor layer, wherein a plurality of voids are formed in the first semiconductor layer during formation of the second semiconductor layer; and
forming a plurality of compound semiconductor layers on the second semiconductor layer, wherein the compound semiconductor layers comprise an active layer.
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Abstract
The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.
31 Citations
18 Claims
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1. A method of fabricating a light emitting device, the method comprising:
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forming a first semiconductor layer on a first substrate; forming a second semiconductor layer on the first semiconductor layer, wherein a plurality of voids are formed in the first semiconductor layer during formation of the second semiconductor layer; and forming a plurality of compound semiconductor layers on the second semiconductor layer, wherein the compound semiconductor layers comprise an active layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of fabricating a light emitting device, the method comprising:
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forming a first semiconductor layer on a first substrate; forming a second semiconductor layer on the first semiconductor layer, wherein a plurality of voids are formed in the first semiconductor layer during formation of the second semiconductor layer; forming a plurality of compound semiconductor layers on the second semiconductor layer, wherein the compound semiconductor layers comprise an active layer; forming a metallic material layer on the first semiconductor layer before forming the second semiconductor layer, wherein the voids are formed under the metallic material layer; and separating the first substrate from the second semiconductor layer after forming the second substrate. - View Dependent Claims (17, 18)
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Specification