Thin-film transistor substrate and method of manufacturing the same
First Claim
1. A method of manufacturing a thin-film transistor (TFT) substrate, the method comprising:
- forming a semiconductor pattern layer on a substrate and a first wiring pattern on a top surface of the semiconductor pattern layer using a first mask, the first wiring pattern including an entire source electrode and an entire drain electrode spaced apart from the source electrode;
forming an insulation layer pattern covering the first wiring pattern and a second wiring pattern on the insulation layer pattern using a second mask, the second wiring pattern including a gate electrode formed on the source and drain electrodes; and
applying a plasma to a portion of the semiconductor pattern layer, which is uncovered by the insulation layer pattern, to change the portion of the semiconductor pattern layer to a conductive pattern.
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Accused Products
Abstract
A thin-film transistor (TFT) substrate includes a semiconductor pattern, a conductive pattern, a first wiring pattern, an insulation pattern and a second wiring pattern. The semiconductor pattern is formed on a substrate. The conductive pattern is formed as a layer identical to the semiconductor pattern on the substrate. The first wiring pattern is formed on the semiconductor pattern. The first wiring pattern includes a source electrode and a drain electrode spaced apart from the source electrode. The insulation pattern is formed on the substrate having the first wiring pattern to cover the first wiring pattern. The second wiring pattern is formed on the insulation pattern. The second wiring pattern includes a gate electrode formed on the source and drain electrodes. Therefore, a TFT substrate is manufactured using two or three masks, so that manufacturing costs may be decreased.
18 Citations
8 Claims
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1. A method of manufacturing a thin-film transistor (TFT) substrate, the method comprising:
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forming a semiconductor pattern layer on a substrate and a first wiring pattern on a top surface of the semiconductor pattern layer using a first mask, the first wiring pattern including an entire source electrode and an entire drain electrode spaced apart from the source electrode; forming an insulation layer pattern covering the first wiring pattern and a second wiring pattern on the insulation layer pattern using a second mask, the second wiring pattern including a gate electrode formed on the source and drain electrodes; and applying a plasma to a portion of the semiconductor pattern layer, which is uncovered by the insulation layer pattern, to change the portion of the semiconductor pattern layer to a conductive pattern. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a thin-film transistor (TFT) substrate, the method comprising:
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forming a semiconductor pattern, which forms a channel of the thin-film transistor, on a substrate and a first wiring pattern on a top surface of the semiconductor pattern using a first mask, the semiconductor pattern including a metal oxide semiconductor, and the first wiring pattern including an entire source electrode and an entire drain electrode spaced apart from the source electrode; forming an insulation layer pattern covering the first wiring pattern and a second wiring pattern on the insulation layer pattern using a second mask, the second wiring pattern including a gate electrode formed on the source and drain electrodes; forming a color filter layer covering the gate electrode and the insulation layer pattern; and forming a conductive pattern on the color filter layer using a third mask, the conductive pattern including a pixel electrode electrically connected to the drain electrode. - View Dependent Claims (8)
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Specification