Semiconductor device and manufacturing method with improved epitaxial quality of III-V compound on silicon surfaces
First Claim
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1. A method of forming a device, the method comprising:
- providing a silicon substrate, wherein a major surface of the silicon substrate is a Si(001) surface, wherein the silicon substrate has insulation regions extending from the major surface into the silicon substrate, and wherein a portion of the silicon substrate is between opposite sidewalls of the insulation regions;
etching the portion of the silicon substrate to form a trench;
epitaxially growing a III-V compound semiconductor region in the trench;
depositing a capping layer on the silicon substrate to cover the III-V compound semiconductor region; and
annealing the silicon substrate after the depositing operation to reduce crystalline defects in the III-V compound semiconductor region.
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Abstract
Stacking faults are reduced or eliminated by epitaxially growing a III-V compound semiconductor region in a trench followed by capping and annealing the region. The capping layer limits the escape of atoms from the region and enables the reduction or elimination of stacking faults along with the annealing.
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Citations
18 Claims
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1. A method of forming a device, the method comprising:
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providing a silicon substrate, wherein a major surface of the silicon substrate is a Si(001) surface, wherein the silicon substrate has insulation regions extending from the major surface into the silicon substrate, and wherein a portion of the silicon substrate is between opposite sidewalls of the insulation regions; etching the portion of the silicon substrate to form a trench; epitaxially growing a III-V compound semiconductor region in the trench; depositing a capping layer on the silicon substrate to cover the III-V compound semiconductor region; and annealing the silicon substrate after the depositing operation to reduce crystalline defects in the III-V compound semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of forming a device, the method comprising:
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providing a silicon substrate, wherein a major surface of the silicon substrate is a <
111>
surface with an off angle greater than about 6 degrees;forming a trench on the silicon substrate, wherein the trench is between insulation regions extending from the major surface; epitaxially growing a III-V compound semiconductor region in the trench; depositing a capping layer on the silicon substrate to cover the III-V compound semiconductor region; and annealing the silicon substrate after the depositing operation to reduce crystalline defects in the III-V compound semiconductor region. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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Specification