×

Reduced defectivity in contacts of a semiconductor device comprising replacement gate electrode structures by using an intermediate cap layer

  • US 8,183,139 B2
  • Filed: 12/09/2010
  • Issued: 05/22/2012
  • Est. Priority Date: 04/30/2010
  • Status: Active Grant
First Claim
Patent Images

1. A method, comprising:

  • forming a dielectric cap layer above a gate electrode structure to fill at least one void in an interlayer dielectric material of a transistor formed above a semiconductor region, said gate electrode structure being laterally embedded in the interlayer dielectric material and comprising a high-k dielectric material and an electrode metal;

    forming a contact opening laterally offset from said gate electrode structure so as to extend through said dielectric cap layer and said interlayer dielectric material;

    forming a contact material in said contact opening;

    removing an excess portion of said contact material so as to expose said dielectric cap layer; and

    performing a removal process to remove a first portion of the dielectric cap layer so as to expose said electrode metal of said gate electrode structure and leave a second portion of the dielectric cap layer in said at least one void.

View all claims
  • 5 Assignments
Timeline View
Assignment View
    ×
    ×