Organic field effect transistor

• US 8,183,559 B2
• Filed: 05/20/2003
• Issued: 05/22/2012
• Est. Priority Date: 05/21/2002
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Tsutsui, Tetsuo
• Primary Examiner(s): Mondt, Johannes P
• Application Number:
  US10/441,214
• Publication Number:
  US 20030218166A1
• Time in Patent Office: 3,290 Days
• Field of Search: 257/40, 257/59, 257/72, 257/213, 257/288, 257/314, 257/315, 257/347, 438/82, 438/99
• US Class Current: 257/40
• CPC Class Codes: G11C 11/34 using semiconductor devices
• CPC Class Codes: H10K 10/462 Insulated gate field-effect transistors [IGFETs]
• CPC Class Codes: H10K 10/468 characterised by the gate dielectrics
• CPC Class Codes: H10K 10/481 characterised by the gate conductors
• CPC Class Codes: H10K 10/82 Electrodes
• CPC Class Codes: H10K 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
• CPC Class Codes: H10K 19/10 comprising field-effect transistors
• CPC Class Codes: H10K 19/201 Integrated devices having a three-dimensional layout, e.g. 3D ICs
• CPC Class Codes: H10K 71/30 Doping active layers, e.g. electron transporting layers
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes
• CPC Class Codes: H10K 85/111 comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
• CPC Class Codes: H10K 85/311 Phthalocyanine
• CPC Class Codes: H10K 85/324 comprising aluminium, e.g. Alq3
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine

Abstract

In an organic field effect transistor, including, on a substrate having an insulating surface, at least a gate electrode, a gate insulating film formed in contact with the gate electrode, an organic semiconductor film formed in contact with the gate insulating film, and at least a pair of source-drain electrodes formed in contact with the organic semiconductor film, a carrier generating electrode to which carriers can be injected in response to a gate signal is implanted within the organic semiconductor film.

Claims

1. An organic field effect transistor comprising:

a first gate electrode over and in contact with an insulating surface over a substrate;

a first gate insulating film over and in contact with the first gate electrode;

a first source electrode and first drain electrode over and in contact with the first gate insulating film;

an organic semiconductor film over and in contact with the first source electrode, the first drain electrode, and the first gate insulating film;

a floating electrode in the organic semiconductor film;

a second source electrode and a second drain electrode over and in contact with the organic semiconductor film;

a second gate insulating film over and in contact with the organic semiconductor film; and

a second gate electrode over and in contact with the second gate insulating film,

wherein the floating electrode comprises;

a negative pole side buffer layer which is an organic thin film layer comprising an alkali metal ion or an alkali earth metal ion; and

a positive pole side buffer layer containing an acceptor type inorganic semiconductor material.

5. The organic field effect transistor according to claim 1,

wherein the first source electrode and the second source electrode are connected.

7. The organic field effect transistor according to claim 1,

wherein the first drain electrode and the second drain electrode are connected.

17. The organic field effect transistor according to claim 1,

wherein the acceptor type inorganic semiconductor material is vanadium oxide.

2. An organic field effect transistor comprising:

a first gate electrode over and in contact with an insulating surface over a substrate;

a first gate insulating film over and in contact with the first gate electrode;

a first source electrode and first drain electrode over and in contact with the first gate insulating film;

a first organic semiconductor film over and in contact with the first source electrode, the first drain electrode, and the first gate insulating film;

a floating electrode over and in contact with the first organic semiconductor film;

a second organic semiconductor film over and in contact with the first organic semiconductor film and the floating electrode;

a second source electrode and a second drain electrode over and in contact with the second organic semiconductor film;

a second gate insulating film over and in contact with the second organic semiconductor film; and

a second gate electrode formed in contact with the second gate insulating film,

wherein the floating electrode comprises;

a negative pole side buffer layer which is an organic thin film layer comprising an alkali metal ion or an alkali earth metal ion; and

a positive pole side buffer layer containing an acceptor type inorganic semiconductor material.

3. The organic field effect transistor according to claim 2,

wherein the first organic semiconductor film is hole transportable, and the second organic semiconductor film is electron transportable.

4. The organic field effect transistor according to claim 2,

wherein the first organic semiconductor film is electron transportable, and the second organic semiconductor film is hole transportable.

6. The organic field effect transistor according to claim 2,

wherein the first source electrode and the second source electrode are connected.

8. The organic field effect transistor according to claim 2,

wherein the first drain electrode and the second drain electrode are connected.

18. The organic field effect transistor according to claim 2,

wherein the acceptor type inorganic semiconductor material is vanadium oxide.

9. An organic field effect transistor comprising:

a first gate electrode over and in contact with an insulating surface over a substrate;

a first gate insulating film over and in contact with the first gate electrode;

a first electrode over and in contact with the first gate insulating film;

an organic semiconductor film over and in contact with the first electrode and the first gate insulating film;

a floating electrode in the organic semiconductor film;

a second electrode over and in contact with the organic semiconductor film;

a second gate insulating film over and in contact with the organic semiconductor film; and

a second gate electrode over and in contact with the second gate insulating film,

wherein the floating electrode comprises;

a negative pole side buffer layer which is an organic thin film layer comprising an alkali metal ion or an alkali earth metal ion; and

a positive pole side buffer layer containing an acceptor type inorganic semiconductor material.

19. The organic field effect transistor according to claim 9,

wherein the acceptor type inorganic semiconductor material is vanadium oxide.

10. An organic field effect transistor comprising:

a first gate electrode over and in contact with an insulating surface over a substrate;

a first gate insulating film over and in contact with the first gate electrode;

a first electrode over and in contact with the first gate insulating film;

a first organic semiconductor film over and in contact with the first electrode and the first gate insulating film;

a floating electrode over and in contact with the first organic semiconductor film;

a second organic semiconductor film over and in contact with the first organic semiconductor film and the floating electrode;

a second electrode over and in contact with the second organic semiconductor film;

a second gate insulating film over and in contact with the second organic semiconductor film; and

a second gate electrode over and in contact with the second gate insulating film,

wherein the floating electrode comprises;

a negative pole side buffer layer which is an organic thin film layer comprising an alkali metal ion or an alkali earth metal ion; and

a positive pole side buffer layer containing an acceptor type inorganic semiconductor material.

11. The organic field effect transistor according to claim 10,

wherein the first organic semiconductor film is hole transportable, and the second organic semiconductor film is electron transportable.

12. The organic field effect transistor according to claim 10,

wherein the first organic semiconductor film is electron transportable, and the second organic semiconductor film is hole transportable.

20. The organic field effect transistor according to claim 10,

wherein the acceptor type inorganic semiconductor material is vanadium oxide.

13. An organic field effect transistor comprising:

a substrate having an insulating surface;

a gate electrode over the substrate;

a gate insulating film over and in contact with the gate electrode;

an organic semiconductor film over and in contact with the gate insulating film;

a source electrode and a drain electrode over and in contact with the organic semiconductor film; and

a floating electrode in the organic semiconductor film,

wherein the floating electrode comprises;

a negative pole side buffer layer which is an organic thin film layer comprising a an alkali metal ion or an alkali earth metal ion; and

a positive pole side buffer layer containing an acceptor type inorganic semiconductor material.

14. The organic field effect transistor according to claim 13,

wherein the floating electrode is embedded in the organic semiconductor film, and

wherein the floating electrode is separated from the source electrode and the drain electrode.

15. The organic field effect transistor according to claim 13,

wherein the organic semiconductor film comprises two layers.

16. The organic field effect transistor according to claim 13, further comprising an insulating film over the organic semiconductor film.

21. The organic field effect transistor according to claim 13,

wherein the acceptor type inorganic semiconductor material is vanadium oxide.