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Organic field effect transistor

  • US 8,183,559 B2
  • Filed: 05/20/2003
  • Issued: 05/22/2012
  • Est. Priority Date: 05/21/2002
  • Status: Active Grant
First Claim
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1. An organic field effect transistor comprising:

  • a first gate electrode over and in contact with an insulating surface over a substrate;

    a first gate insulating film over and in contact with the first gate electrode;

    a first source electrode and first drain electrode over and in contact with the first gate insulating film;

    an organic semiconductor film over and in contact with the first source electrode, the first drain electrode, and the first gate insulating film;

    a floating electrode in the organic semiconductor film;

    a second source electrode and a second drain electrode over and in contact with the organic semiconductor film;

    a second gate insulating film over and in contact with the organic semiconductor film; and

    a second gate electrode over and in contact with the second gate insulating film,wherein the floating electrode comprises;

    a negative pole side buffer layer which is an organic thin film layer comprising an alkali metal ion or an alkali earth metal ion; and

    a positive pole side buffer layer containing an acceptor type inorganic semiconductor material.

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