Semiconductor device

• US 8,183,607 B2
• Filed: 07/25/2011
• Issued: 05/22/2012
• Est. Priority Date: 01/28/1999
• Status: Expired due to Fees

• Current Assignee: Renesas Eastern Japan Semiconductor Incorporated (Renesas Electronics Corporation)
• Original Assignee: Hitachi Tohbu Semiconductor, Ltd. (Renesas Electronics Corporation), Renesas Electronics Corporation
• Inventors: Kajiwara, Ryoichi, Koizumi, Masahiro, Morita, Toshiaki, Takahashi, Kazuya, Kishimoto, Munehisa, Ishii, Shigeru, Hirashima, Toshinori, Takahashi, Yasushi, Hata, Toshiyuki, Sato, Hiroshi, Ookawa, Keiichi
• Primary Examiner(s): Chambliss, Alonzo
• Application Number:
  US13/189,883
• Publication Number:
  US 20110298020A1
• Time in Patent Office: 302 Days
• Field of Search: None
• US Class Current: 257/288
• CPC Class Codes: H01L 21/4814 Conductive parts
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/561 Batch processing
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 2224/13139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/29011 comprising apertures or cavities
• CPC Class Codes: H01L 2224/29015 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/29109 Indium [In] as principal constituent
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29339 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/37011 : comprising apertures or cavities
• CPC Class Codes: H01L 2224/40095 : Kinked
• CPC Class Codes: H01L 2224/40225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/45124 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45139 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48 : of an individual wire connector
• CPC Class Codes: H01L 2224/73221 : Strap and wire connectors
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2224/75251 : in the lower part of the bonding apparatus, e.g. in the apparatus chuck
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81203 : Thermocompression bonding, e.g. diffusion bonding, pressure joining, thermocompression welding or solid-state welding
• CPC Class Codes: H01L 2224/81205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/81801 : Soldering or alloying
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/83101 : as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/83138 : the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 2224/83191 : wherein the layer connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/83825 : Solid-liquid interdiffusion
• CPC Class Codes: H01L 2224/8385 : using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
• CPC Class Codes: H01L 2224/83851 : being an anisotropic conductive adhesive
• CPC Class Codes: H01L 2224/84801 : Soldering or alloying
• CPC Class Codes: H01L 2224/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 23/28 : Encapsulations, e.g. encapsulating layers, coatings, e.g. for protectionH01L23/552 takes precedence; insulating layers for contacts or interconnections H01L23/5329
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/495 : Lead-frames or other flat leads H01L23/498 takes precedence; lead frame interconnections between components H01L23/52
• CPC Class Codes: H01L 23/4952 : the additional leads being a bump or a wire
• CPC Class Codes: H01L 23/49548 : Cross section geometry H01L23/49562 takes precedence
• CPC Class Codes: H01L 23/49555 : the bent parts being the outer leads
• CPC Class Codes: H01L 23/49562 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/49582 : Metallic layers on lead frames
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 24/97 : the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 29/7833 : with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's for thin film transistors H01L29/78618
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01014 : Silicon [Si]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01039 : Yttrium [Y]
• CPC Class Codes: H01L 2924/01042 : Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01049 : Indium [In]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01057 : Lanthanum [La]
• CPC Class Codes: H01L 2924/01068 : Erbium [Er]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01083 : Bismuth [Bi]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/0133 : Ternary Alloys
• CPC Class Codes: H01L 2924/0134 : Quaternary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/1301 : Thyristor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/18301 : being an anchoring portion, i.e. mechanical interlocking between the encapsulation resin and another package part
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3512 : Cracking
• CPC Class Codes: H05K 3/3426 : characterised by the leads

Abstract

A semiconductor device features a semiconductor chip including a MOSFET, a first electrode of the MOSFET disposed on an obverse surface of the chip, a second, control electrode of the MOSFET disposed on the obverse surface, a third electrode of the MOSFET disposed on a second, opposing surface of the chip, first, second, and third conductive members, each having top surface and opposing bottom surface, the first, second, and third conductive members connecting with the first, second, and third electrodes electrically, respectively, a sealing body having top and bottom surfaces and sealing parts of the first, second, and third conductive members, the first conductive member having first, second, and third contiguous portions, the first portion is positioned over the first electrode, the second is positioned between the first and second portions and the third portion is positioned under the obverse surface of the chip.

Claims

1. A semiconductor device comprising:

a semiconductor chip including a MOSFET having an obverse surface and a reverse surface opposite to the obverse surface;

a first electrode of the MOSFET formed on the obverse surface,

a second electrode of the MOSFET formed on the obverse surface, and

a third electrode of the MOSFET formed on the reverse surface,

a first conductive member having a first top surface and a first bottom surface opposite to the first top surface and connecting with the first electrode of the semiconductor chip electrically;

a second conductive member having a second top surface and a second bottom surface opposite to the second top surface and connecting with the second electrode of the semiconductor chip electrically;

a third conductive member having a third top surface and a third bottom surface opposite to the third top surface and connecting with the third electrode of the semiconductor chip electrically; and

a sealing body having a top surface and a bottom surface opposite to the top surface and sealing the semiconductor chip, and parts of the first, second, and third conductive members;

wherein the first conductive member has a first portion, a second portion, and a third portion,

the first portion of the first conductive member is positioned over the first electrode of the semiconductor chip, the first bottom surface of the first portion of the first conductive member is electrically connected with the first electrode of the semiconductor chip,

the second portion is positioned between the first and third portions, and

the third portion is positioned under the obverse surface of the semiconductor chip and next to a first side of the semiconductor chip in plan view,

wherein the third conductive member is positioned under the third electrode of the semiconductor chip, the third top surface of the third conductive member is electrically connected with the third electrode of the semiconductor chip,

wherein a part of the first top surface of the first portion of the first conductive member is exposed from the top surface of the sealing body,

wherein a part of the third bottom surface of the third conductive member is exposed from the bottom surface of the sealing body,

wherein the first portion of the first conductive member overlaps the first side of the semiconductor chip in plan view, and

wherein a height of the first bottom surface of the third portion of the first conductive member and a height of the third bottom surface of the third conductive member are same.

2. The semiconductor device according to claim 1,

wherein the second conductive member overlaps the first side of the semiconductor chip in plan view.

3. The semiconductor device according to claim 1,

wherein the first, second, and third electrodes are source, gate, and drain electrodes, respectively.

4. A semiconductor device comprising:

a semiconductor chip including a MOSFET having an obverse surface and a reverse surface opposite to the obverse surface;

a source electrode of the MOSFET formed on the obverse surface,

a gate electrode of the MOSFET formed on the obverse surface, and

a drain electrode of the MOSFET formed on the reverse surface,

a first conductive member having a first top surface and a first bottom surface opposite to the first top surface and connecting with the source electrode of the semiconductor chip electrically;

a second conductive member having a second top surface and a second bottom surface opposite to the second top surface and connecting with the gate electrode of the semiconductor chip electrically;

a third conductive member having a third top surface and a third bottom surface opposite to the third top surface and connecting with the drain electrode of the semiconductor chip electrically; and

a sealing body having a top surface and a bottom surface opposite to the top surface and sealing the semiconductor chip, and parts of the first, second, and third conductive members;

wherein the first conductive member has a first portion, a second portion, and a third portion,

the first portion of the first conductive member is positioned over the source electrode of the semiconductor chip, the first bottom surface of the first portion of the first conductive member is electrically connected with the source electrode of the semiconductor chip,

the second portion is positioned between the first and third portions, and

the third portion is positioned under the obverse surface of the semiconductor chip and next to a first side of the semiconductor chip in plan view,

wherein the third conductive member is positioned under the drain electrode of the semiconductor chip, the third top surface of the third conductive member is electrically connected with the drain electrode of the semiconductor chip,

wherein a part of the first top surface of the first portion of the first conductive member is exposed from the top surface of the sealing body,

wherein a part of the third bottom surface of the third conductive member is exposed from the bottom surface of the sealing body,

wherein the first portion of the first conductive member overlaps the first side of the semiconductor chip in plan view, and

wherein a height of the first bottom surface of the third portion of the first conductive member and a height of the third bottom surface of the third conductive member are same.