Nitride semiconductor wafer having a chamfered edge
First Claim
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1. A nitride semiconductor device comprising:
- a substrate of a nitride semiconductor wafer which has a chamfered edge, a 0.5 μ
m-10 μ
m thick edge process-induced degradation layer with a deformed lattice structure remaining on the chamfered edge and a mirror-flat top surface;
nitride films epitaxially grown on the substrate; and
electrodes formed on the epitaxially grown layers.
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Abstract
A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.
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5 Claims
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1. A nitride semiconductor device comprising:
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a substrate of a nitride semiconductor wafer which has a chamfered edge, a 0.5 μ
m-10 μ
m thick edge process-induced degradation layer with a deformed lattice structure remaining on the chamfered edge and a mirror-flat top surface;nitride films epitaxially grown on the substrate; and electrodes formed on the epitaxially grown layers. - View Dependent Claims (2, 3, 4)
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5. A nitride semiconductor device comprising:
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a substrate of a nitride semiconductor wafer having a chamfered edge formed by a rubber-bonding whetstone, a 1 μ
m-3 μ
m thick edge process-induced degradation layer with a deformed lattice structure remaining on the chamfered edge and a mirror-flat top surface;nitride films epitaxially grown on the substrate; and electrodes formed on the epitaxially grown layers.
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Specification