Miniature pressure transducer

• US 8,183,975 B2
• Filed: 09/22/2009
• Issued: 05/22/2012
• Est. Priority Date: 09/22/2008
• Status: Expired due to Fees

• Current Assignee: Amphenol Thermometrics, Inc. (Amphenol Corporation)
• Original Assignee: GE Infrastructure Sensing Incorporated (General Electric Company)
• Inventors: King, James Anthony, Craddock, Russell
• Primary Examiner(s): LEE, KYUNG S
• Application Number:
  US12/564,527
• Publication Number:
  US 20100073123A1
• Time in Patent Office: 973 Days
• Field of Search: 338/2, 338/4, 338/13, 338/36, 338/42, 737/24, 737/15, 737/18, 737/54, 438/53, 257/419
• US Class Current: 338/42
• CPC Class Codes: G01L 19/0069 from the sensor to its support
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm

Abstract

A miniature pressure transducer is disclosed which is able to operate at high temperatures. The pressure transducer is provided on a substrate comprising an elongate silicon base portion with one or more contact areas formed at one end and a diaphragm formed at the opposite distal end. A plurality of piezoresistive elements are provided on the diaphragm, preferably in a Wheatstone Bridge arrangement, and connected to the contact areas using interconnects. The diaphragm extends across substantially the entire effective width of the elongate base portion providing a compact width while still maintaining a sensitive pressure sensing capability.

Claims

1. A substrate for a pressure transducer, the substrate comprising:

an elongate base portion comprising silicon, the elongate base portion having one or more contact areas formed at one end and a diaphragm formed at the opposite distal end of the elongate length of the base portion;

a plurality of piezoresistive elements disposed proximate each edge of the diaphragm and connected to the contact areas using interconnects, the plurality of piezoresistive elements generating electrical signals in response to flexing of the diaphragm, the combination of the electrical signals reflecting changes in pressure that occurs below the diaphragm; and

wherein the diaphragm extends across substantially the entire effective width of the elongate base portion.

2. The substrate according to claim 1, wherein the diaphragm comprises a cavity in the base portion with a side wall on each side of the cavity.

3. The substrate according to claim 1, wherein the piezoresistive elements are arranged on an insulator provided on the silicon base portion.

4. The substrate according to claim 1, wherein a protective layer is bonded on top of the piezoresistive elements and interconnects.

5. The substrate according to claim 4, wherein a cavity is provided between the substrate and the protective layer and a vent hole is provided to connect a reference pressure to the cavity and an internal surface of the diaphragm.

6. The substrate according to claim 4, wherein the protective layer is bonded to the base portion to provide a hermetically sealed cavity therebetween.

7. The substrate according to claim 4, wherein the protective layer is arranged to provide an integrated shadow mask to allow self alignment of the contact areas.

8. The substrate according to claim 1, wherein the substrate is provided in a protective cover with a seal provided between the substrate and the protective cover at a point along the elongate length of the base portion, between the diaphragm and the one or more contact areas.

9. The substrate according to claim 8, wherein the protective cover is a tube.

10. The substrate according to claim 8, wherein the seal is separated from the diaphragm such that any stresses provided by contact between the seal and the substrate have no significant affect on the diaphragm.

11. The substrate according to claim 8, wherein the protective cover includes an opening to enable fluid to which it is exposed to contact the diaphragm.

12. The substrate according to claim 4, wherein the substrate is provided in a protective cover with a seal provided between the substrate and the protective cover at a point along the elongate length of the base portion, between the diaphragm and the one or more contact areas.

13. The substrate according to claim 12, wherein the bonded base portion and protective layer are hermetically sealed into the protective cover.

14. A pressure transducer comprising:

a substrate comprising,

an elongate base portion comprising silicon, the elongate base portion having one or more contact areas formed at one end and a diaphragm formed at the opposite distal end of the elongate length of the base portion;

a plurality of piezoresistive elements disposed proximate each edge of the diaphragm and connected to the contact areas using interconnects, the plurality of piezoresistive elements generating electrical signals in response to flexing of the diaphragm, the combination of the electrical signals reflecting changes in pressure that occur below the diaphragm; and

wherein the diaphragm extends across substantially the entire effective width of the elongate base portion; and

a control device connected to the substrate via the contact areas to determine the pressure to which the diaphragm of the substrate is exposed in response to flexing of the diaphragm detected by the piezoresistive elements.