Radical-enhanced atomic layer deposition system and method

• US 8,187,679 B2
• Filed: 07/26/2007
• Issued: 05/29/2012
• Est. Priority Date: 07/29/2006
• Status: Active Grant

• Current Assignee: Lotus Applied Technology LLC
• Original Assignee: Lotus Applied Technology LLC
• Inventors: Dickey, Eric R., Barrow, William A.
• Primary Examiner(s): Gambetta, Kelly M
• Application Number:
  US11/829,050
• Publication Number:
  US 20080026162A1
• Time in Patent Office: 1,769 Days
• Field of Search: 427/569
• US Class Current: 427/569
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45551 for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
• CPC Class Codes: C23C 16/545 for coating elongated substrates

Abstract

A radical-enhanced atomic layer deposition (REALD) system and method involves moving a substrate along a circulating or reciprocating transport path between zones that provide alternating exposure to a precursor gas and a gaseous radical species. The radical species may be generated in-situ within a reaction chamber by an excitation source such as plasma generator or ultraviolet radiation (UV), for example. The gaseous radical species is maintained in a radicals zone within the reaction chamber while a precursor gas is introduced into a precursor zone. The precursor zone is spaced apart from the radicals zone to define a radical deactivation zone therebetween. Purge gas flowing through the various zones may provide flow and pressure conditions that substantially prevent the precursor gas from flowing into the radicals zone. In some embodiments, the system includes a partition having one or more flow-restricting passageways though which the substrate is transported.

Claims

1. A method for depositing a thin film on a substrate, comprising:

establishing a continuous flow of a purge gas through a reaction chamber;

maintaining a gaseous reactive radical species in a radicals zone within the reaction chamber while introducing a precursor gas into a precursor zone within the reaction chamber, the precursor zone being spaced apart from the radicals zone to define a deactivation zone therebetween, the purge gas flowing through the radicals zone, the deactivation zone, and the precursor zone such that flow and pressure conditions within the reaction chamber substantially prevent the precursor gas from flowing into the radicals zone and cause the radical species to flow from the radical zone and into the deactivation zone;

deactivating the radical species in the deactivation zone to form a deactivated species therefrom and to substantially prevent the reactive radical species from mixing with the precursor gas, at least some of the deactivated species flowing into the precursor zone; and

alternately transporting a substrate between the radicals zone and the precursor zone repeatedly to thereby alternately expose the substrate to the radical species and the precursor gas multiple times, each exposure of the substrate to the precursor gas resulting in some of the precursor gas adsorbing on the substrate as an adsorbed precursor, and each subsequent exposure of the substrate to the radical species resulting in some of the radical species converting at least a portion of the adsorbed precursor to an element or compound, whereby a thin film is formed on the substrate.

2. The method of claim 1, wherein the purge gas is nonreactive with the precursor gas.

3. The method of claim 1, wherein the radical species is generated in-situ continuously by applying energy to the purge gas in the vicinity of the radicals zone.

4. The method of claim 3, wherein the radical species is generated by exposing purge gas to a steady-state UV light in the vicinity of the radicals zone.

5. The method of claim 3, wherein the radical species is generated by igniting a plasma from purge gas in the vicinity of the radicals zone.

6. The method of claim 5, wherein the plasma is ignited by a steady-state DC generator.

7. The method of claim 1, wherein the purge gas flows through the reaction chamber along a flow path extending through the radicals zone, the deactivation zone is located generally downstream in the flow path relative to the radicals zone, and the precursor zone is located generally downstream in the flow path relative to the deactivation zone.

8. The method of claim 7, wherein the radical species are generated by a radical generator that extends into the flow path and the precursor gas is injected into the flow path leeward of the radical generator.

9. The method of claim 1, wherein a continuous flow of the precursor gas is injected into the precursor zone.

10. The method of claim 1, further comprising pumping from the reaction chamber to create a vacuum therein.

11. The method of claim 1, wherein the transporting of the substrate includes moving the substrate along a circular transport path.

12. The method of claim 1, wherein the maintaining of the radical species includes generating the radical species remotely of the radicals zone and injecting the radical species into the radicals zone.

13. The method of claim 1, wherein the radical species comprises hydrogen radicals and the precursor gas comprises a metal-containing molecule.

14. The method of claim 1, wherein deactivating the radical species includes contacting the radical species in the deactivation zone with an active radicals deactivation device.

15. The method of claim 1, further comprising:

introducing a second precursor gas into the reaction chamber at a second precursor zone; and

transporting the substrate along a transport path that extends into the second precursor zone.

16. The method of claim 1, further comprising maintaining a second gaseous radical species within the reaction chamber.

17. The method of claim 1, wherein each exposure of the substrate to the precursor gas results in self-limiting, saturating adsorption of precursor gas on the substrate as adsorbed precursor.

18. The method of claim 1, wherein the thin film is deposited by atomic layer deposition.

19. The method of claim 1, wherein the thin film consists essentially of a non-semiconductor material.

20. The method of claim 1, wherein the thin film consists essentially of a metal.