Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
First Claim
1. A nitride semiconductor device, comprising one or more non-polar (Al, B, In, Ga)N quantum well layers containing Indium, wherein at least one of the (Al, B, In, Ga)N quantum well layers has a thickness greater than 5 nanometers and emits light having a peak photoluminescence (PL) emission wavelength and an intensity that are greater than a PL emission wavelength and an intensity of light emitted from a non-polar (Al, B, In, Ga)N quantum well layer having a thickness of 5 nanometers or less.
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Abstract
A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices. Non-polar (11
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Citations
21 Claims
- 1. A nitride semiconductor device, comprising one or more non-polar (Al, B, In, Ga)N quantum well layers containing Indium, wherein at least one of the (Al, B, In, Ga)N quantum well layers has a thickness greater than 5 nanometers and emits light having a peak photoluminescence (PL) emission wavelength and an intensity that are greater than a PL emission wavelength and an intensity of light emitted from a non-polar (Al, B, In, Ga)N quantum well layer having a thickness of 5 nanometers or less.
- 7. A nitride semiconductor device, comprising one or more non-polar (Al, B, In, Ga)N layers grown on a non-polar GaN substrate wherein the non-polar (Al, B, In, Ga)N layers include one or more non-polar (Al, B, In, Ga)N quantum wells that has a thickness greater than 5 nanometers and emits light having a peak photoluminescence (PL) emission wavelength and an intensity that are greater than a PL emission wavelength and an intensity of light emitted from a non-polar (Al, B, In, Ga)N quantum well having a thickness of 5 nanometers or less.
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18. A method for fabricating a nitride semiconductor device, comprising:
growing one or more non-polar (Al, B, In, Ga)N quantum well layers containing Indium, wherein at least one of the (Al, B, In, Ga)N quantum well layers has a thickness greater than 5 nanometers and emits light having a peak photoluminescence (PL) emission wavelength and an intensity that are greater than a PL emission wavelength and an intensity of light emitted from a non-polar (Al, B, In, Ga)N quantum well layer having a thickness of 5 nanometers or less. - View Dependent Claims (19, 20, 21)
Specification