Amorphous oxide and field effect transistor
First Claim
1. An amorphous oxide, whereinthe amorphous oxide includes In, Zn, N and O,an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent,an atomic composition ratio of N to a sum of In and Zn (N/(In +Zn)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 7 atomic percent,an atomic composition ratio of In to In and Zn (In/(In +Zn)) in the amorphous oxide is equal to or larger than 15 atomic percent and equal to or smaller than 75 atomic percent, andthe amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.
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Accused Products
Abstract
In a field effect transistor, a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.
35 Citations
8 Claims
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1. An amorphous oxide, wherein
the amorphous oxide includes In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, an atomic composition ratio of N to a sum of In and Zn (N/(In +Zn)) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 7 atomic percent, an atomic composition ratio of In to In and Zn (In/(In +Zn)) in the amorphous oxide is equal to or larger than 15 atomic percent and equal to or smaller than 75 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.
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5. A field effect transistor, wherein
a channel layer of the field effect transistor is composed of an amorphous oxide including In, Zn, N and O, an atomic composition ratio of N to N and O (N/(N+O) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 3 atomic percent, an atomic composition ratio of N to a sum of In and Zn (N/In +Zn) in the amorphous oxide is equal to or larger than 0.01 atomic percent and equal to or smaller than 7 atomic percent, an atomic composition ratio of In to In and Zn (In/(In +Zn)) in the amorphous oxide is equal to or larger than 15 atomic percent and equal to or smaller than 75 atomic percent, and the amorphous oxide does not include Ga, or, in a case where the amorphous oxide includes Ga, the number of Ga atoms contained in the amorphous oxide is smaller than the number of N atoms.
Specification
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- Resources
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Current AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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Original AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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InventorsItagaki, Naho, Iwasaki, Tatsuya
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Primary Examiner(s)ARMAND, MARC ANTHONY
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Application NumberUS12/597,934Publication NumberTime in Patent Office1,468 DaysField of Search257/43, 257/57, 257/E29.296, 257/E29.095US Class Current257/43CPC Class CodesH01L 29/247 Amorphous materialsH01L 29/7869 having a semiconductor body...
