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Field effect transistor

  • US 8,188,471 B2
  • Filed: 08/29/2008
  • Issued: 05/29/2012
  • Est. Priority Date: 09/05/2007
  • Status: Active Grant
First Claim
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1. A field effect transistor comprising:

  • a gate electrode;

    a source electrode;

    a drain electrode; and

    a channel layer comprising an oxide material containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40.

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