Field effect transistor
First Claim
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1. A field effect transistor comprising:
- a gate electrode;
a source electrode;
a drain electrode; and
a channel layer comprising an oxide material containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40.
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Abstract
A field effect transistor is provided including a gate electrode (for example, 15), a source electrode (13), a drain electrode (14) and a channel layer (11) to control current flowing between the source electrode (13) and the drain electrode (14) by applying a voltage to the gate electrode (15). The channel layer (11) is constituted of an amorphous oxide containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40.
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Citations
10 Claims
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1. A field effect transistor comprising:
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a gate electrode; a source electrode; a drain electrode; and a channel layer comprising an oxide material containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40. - View Dependent Claims (2, 3, 8)
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4. A field effect transistor comprising:
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a gate electrode; a source electrode; a drain electrode; and a channel layer comprising an oxide material containing In, Zn and Si and having a compositional ratio of Si expressed by Si/(In+Zn+Si) of not less than 0.05 and not more than 0.40. - View Dependent Claims (9)
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5. A field effect transistor comprising:
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a gate electrode; a source electrode; a drain electrode; a channel layer; and a gate insulating layer in contact with said channel layer, wherein said channel layer comprises an oxide material containing In and Si and having a compositional ratio expressed by Si/(In+Si) of not less than 0.05 and not more than 0.40, and wherein said gate insulating layer comprises of an oxide or nitride, containing Si. - View Dependent Claims (6, 7, 10)
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Specification