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Semiconductor device and manufacturing method thereof

  • US 8,188,477 B2
  • Filed: 11/17/2009
  • Issued: 05/29/2012
  • Est. Priority Date: 11/21/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a first gate electrode over an insulating surface;

    a first insulating layer over the first gate electrode;

    an oxide semiconductor layer comprising a channel formation region over the first insulating layer;

    a channel protective layer over and in contact with the oxide semiconductor layer;

    a source electrode and a drain electrode over the oxide semiconductor layer;

    a second insulating layer covering the source electrode and the drain electrode; and

    a second gate electrode over the second insulating layer;

    wherein the second insulating layer is in direct contact with at least a portion of the channel protective layer, the portion being over the channel formation region.

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