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Semiconductor device and method of fabricating the same

  • US 8,188,478 B2
  • Filed: 06/27/2011
  • Issued: 05/29/2012
  • Est. Priority Date: 03/06/2000
  • Status: Expired due to Fees
First Claim
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1. A display device comprising:

  • a thin film transistor, the thin film transistor comprising;

    a gate electrode formed over a substrate;

    an insulating film formed over the gate electrode;

    a semiconductor film formed over the insulating film;

    a source electrode formed over the semiconductor film; and

    a drain electrode formed over the semiconductor film;

    a pixel electrode comprising a transparent conductive material, formed over the substrate, and connected to the drain electrode;

    a source wiring being continuous to the source electrode, formed over the insulating film;

    a gate wiring being continuous to the gate electrode, formed over the substrate;

    a passivation film formed over the source electrode and the drain electrode, the passivation film being in contact with a portion of the semiconductor film between the source electrode and the drain electrode; and

    a capacitor, the capacitor comprising;

    a capacitor wiring formed over the substrate, wherein the capacitor wiring comprises a same material as the gate electrode;

    the insulating film formed over the capacitor wiring; and

    the pixel electrode formed over the capacitor wiring with the insulating film interposed therebetween,wherein the capacitor wiring extends substantially in parallel with the gate wiring at least in a pixel portion,wherein the capacitor wiring is electrically connected to a terminal portion, andwherein the terminal portion is formed in an edge portion of the substrate.

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