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SiC semiconductor device with self-aligned contacts, integrated circuit and manufacturing method

  • US 8,188,482 B2
  • Filed: 12/22/2008
  • Issued: 05/29/2012
  • Est. Priority Date: 12/22/2008
  • Status: Active Grant
First Claim
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1. A Junction Field Effect Transistor, comprising:

  • gate control structures each configured to control the conductivity of a channel region within a silicon carbide substrate by field effect; and

    a contact being self-aligned to opposing sidewalls of adjacent gate control structures by intermediate spacers,wherein the contact is connected to a bottom gate region of the Junction Field Effect Transistor and the gate control structures include top gate control structures, the channel region being sandwiched between one of the top gate structures and the bottom gate region, andwherein a source region is embedded in the bottom gate region.

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