Silicon carbide devices having smooth channels
First Claim
Patent Images
1. A power device, comprising:
- a p-type conductivity well region;
a buried p+ conductivity region in the p-type conductivity well region;
an n+ conductivity region on the buried p+ conductivity region; and
a channel region of the power device adjacent the buried p+ conductivity region and n+ conductivity region, the channel region of the power device having a root mean square (RMS) surface roughness of less than about 1.0 Å
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Abstract
Power devices are provided including a p-type conductivity well region and a buried p+ conductivity region in the p-type conductivity well region. An n+ conductivity region is provided on the buried p+ conductivity region. A channel region of the power device is provided adjacent the buried p+ conductivity region and n+ conductivity region, the channel region of the power device having a root mean square (RMS) surface roughness of less than about 1.0 Å.
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Citations
32 Claims
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1. A power device, comprising:
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a p-type conductivity well region; a buried p+ conductivity region in the p-type conductivity well region; an n+ conductivity region on the buried p+ conductivity region; and a channel region of the power device adjacent the buried p+ conductivity region and n+ conductivity region, the channel region of the power device having a root mean square (RMS) surface roughness of less than about 1.0 Å
. - View Dependent Claims (2, 4, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 32)
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3. A power device, comprising:
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a p-type conductivity well region; a buried p+ conductivity region in the p-type conductivity well region; an n+ conductivity region on the buried p+ conductivity region; a channel region of the power device adjacent the buried p+ conductivity region and n+ conductivity region, the channel region of the power device having a root mean square (RMS) surface roughness of less than about 1.0 Å
,wherein the p-type conductivity well region comprises a p-type silicon carbide well region; wherein the buried p+ conductivity region comprises a buried region of p+ silicon carbide in the p-type silicon carbide well region; and wherein the n+ conductivity region comprises an n+ region of silicon carbide on the buried region of p+ silicon carbide; and a sacrificial oxide layer on a surface of the channel region having a thickness of from about 100 to about 1000 Å
, wherein the RMS surface roughness of the channel region is reduced to about 0.70 Å
after formation of the sacrificial oxide layer.
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5. A power device, comprising:
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a p-type conductivity well region; a buried p+ conductivity region in the p-type conductivity well region; an n+ conductivity region on the buried p+ conductivity region; a channel region of the power device adjacent the buried p+ conductivity region and n+ conductivity region, the channel region of the power device having a root mean square (RMS) surface roughness of less than about 1.0 Å
; andan n−
silicon carbide region on the channel region of the power device, the presence of the n−
silicon carbide region providing a reduction in a surface roughness of the channel region,wherein the reduction in the surface roughness is a reduction in a root mean square (RMS) surface roughness of from at least about 28 Å
to less than about 1.0 Å
.
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- 17. A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) comprising a channel region having a root mean square (RMS) surface roughness of less than about 1.0 Å
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18. A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) comprising:
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a channel region having a root mean square (RMS) surface roughness of less than about 1.0 Å
; anda sacrificial oxide layer on a surface of the channel region having a thickness of from about 100 to about 1000 Å
, wherein the RMS surface roughness of the channel region is reduced to about 0.70 Å
after formation of the sacrificial oxide layer.
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20. A Metal Oxide Semiconductor Field Effect Transistor (MOSFET) comprising:
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a channel region having a root mean square (RMS) surface roughness of less than about 1.0 Å
; andan n−
silicon carbide region on the channel region of the MOSFET, the presence of the n−
silicon carbide region providing a reduction in a surface roughness of the channel region,wherein the reduction in the surface roughness is a reduction in a root mean square (RMS) surface roughness of from at least about 28 Å
to less than about 1.0 Å
.
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30. A power device, comprising:
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a p-type conductivity well region; a buried p+ conductivity region in the p-type conductivity well region; an n+ conductivity region on the buried p+ conductivity region; a channel region of the power device adjacent the buried p+ conductivity region and n+ conductivity region; and an n−
conductivity region on the channel region of the power device, the presence of the n−
conductivity region providing a reduction in a surface roughness of the channel region. - View Dependent Claims (31)
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Specification