Semiconductor device
First Claim
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1. A semiconductor device comprising:
- a semiconductor layer made of SiC and having a surface;
an impurity region formed on a surface layer portion of the semiconductor layer by doping the semiconductor layer with an impurity, the impurity forming a part of the surface of the semiconductor layer; and
a contact wire formed on the surface of the semiconductor layer in contact with the impurity region, whereinthe contact wire has at least a polysilicon layer and a metal layer, and has a multilayer structure obtained by successively laminating the polysilicon layer and the metal layer such that the polysilicon layer is in contact with the impurity region.
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Abstract
The semiconductor device according to the present invention includes: a semiconductor layer made of SiC; an impurity region formed by doping the semiconductor layer with an impurity; and a contact wire formed on the semiconductor layer in contact with the impurity region, while the contact wire has a polysilicon layer in the portion in contact with the impurity region, and has a metal layer on the polysilicon layer.
14 Citations
7 Claims
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1. A semiconductor device comprising:
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a semiconductor layer made of SiC and having a surface; an impurity region formed on a surface layer portion of the semiconductor layer by doping the semiconductor layer with an impurity, the impurity forming a part of the surface of the semiconductor layer; and a contact wire formed on the surface of the semiconductor layer in contact with the impurity region, wherein the contact wire has at least a polysilicon layer and a metal layer, and has a multilayer structure obtained by successively laminating the polysilicon layer and the metal layer such that the polysilicon layer is in contact with the impurity region. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification