Growth of germanium epitaxial thin film with negative photoconductance characteristics and photodiode using the same
First Claim
1. A method of growing a germanium (Ge) epitaxial thin film, comprising:
- growing a first germanium (Ge) thin film on a silicon substrate at a low temperature;
growing a second germanium (Ge) thin film while raising the temperature; and
growing a third germanium (Ge) thin film at a high temperature,wherein each growing is performed using reduced pressure chemical vapor deposition (RPCVD), and the first, second and third germanium (Ge) thin films grown by the above steps have negative photoconductance characteristics.
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Abstract
A method of growing a germanium (Ge) epitaxial thin film having negative photoconductance characteristics and a photodiode using the same are provided. The method of growing the germanium (Ge) epitaxial thin film includes growing a germanium (Ge) thin film on a silicon substrate at a low temperature, raising the temperature to grow the germanium (Ge) thin film, and growing the germanium (Ge) thin film at a high temperature, wherein each stage of growth is performed using reduced pressure chemical vapor deposition (RPCVD). The three-stage growth method enables formation of a germanium (Ge) epitaxial thin film characterized by alleviated stress on a substrate, a lowered penetrating dislocation density, and reduced surface roughness.
27 Citations
6 Claims
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1. A method of growing a germanium (Ge) epitaxial thin film, comprising:
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growing a first germanium (Ge) thin film on a silicon substrate at a low temperature; growing a second germanium (Ge) thin film while raising the temperature; and growing a third germanium (Ge) thin film at a high temperature, wherein each growing is performed using reduced pressure chemical vapor deposition (RPCVD), and the first, second and third germanium (Ge) thin films grown by the above steps have negative photoconductance characteristics. - View Dependent Claims (2, 3, 4, 5)
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6. A method of growing a germanium (Ge) epitaxial thin film, comprising:
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growing a low-temperature germanium (Ge) thin film on a silicon substrate at a first temperature; growing a rising-temperature germanium (Ge) thin film on the low-temperature germanium (Ge) thin film under temperature that continuously changes from the first temperature to a second temperature higher than the first temperature; and growing a high-temperature germanium (Ge) thin film on the rising-temperature germanium (Ge) thin film at the second temperature.
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