Semiconductor device, its manufacturing method, and sputtering target material for use in the method
First Claim
1. A semiconductor device comprising:
- an insulating film including silicon (Si);
an interconnection located in a groove disposed on the insulating film the interconnection including copper (Cu); and
a barrier layer located between the insulating film and the interconnection, the barrier layer including a manganese (Mn)-based oxide having an atomic concentration of manganese (Mn) maximized in a central part of the barrier layer.
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Accused Products
Abstract
A semiconductor device enables a barrier layer to fully acquire a barriering property against the diffusion of Cu from a wiring main body and the diffusion of Si from an insulating film, enhances the adhesiveness of the barrier layer and the insulating film and excels in reliability of operation over a long period of time. In this invention, a semiconductor device 1 provided on an insulating film 3 with a wiring includes the insulating film 3 containing silicon (Si), a wiring main body 8 formed of copper (Cu) in a groove-like opening 4 disposed in the insulating film 3, and a barrier layer 7 formed between the wiring main body 8 and the insulating film 3 and made of an oxide containing Cu and Si and Mn in such a manner that the atomic concentration of Cu decreases monotonously from the wiring main body 8 side toward the insulating film 3 side, the atomic concentration of Si decreases monotonously from the insulating film 3 side toward the wiring main body 8 side, and the atomic concentration of Mn is maximized in the region in which the atomic concentration of Cu and the atomic concentration of Si are approximately equal.
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Citations
29 Claims
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1. A semiconductor device comprising:
- an insulating film including silicon (Si);
an interconnection located in a groove disposed on the insulating film the interconnection including copper (Cu); and
a barrier layer located between the insulating film and the interconnection, the barrier layer including a manganese (Mn)-based oxide having an atomic concentration of manganese (Mn) maximized in a central part of the barrier layer. - View Dependent Claims (3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 15, 16, 17, 20, 24, 25, 26, 27, 28, 29)
- an insulating film including silicon (Si);
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2. A semiconductor device comprising:
- an insulating film including silicon (Si);
an interconnection located in a groove disposed on the insulating film, the interconnection including copper (Cu); and
a barrier layer located between the insulating film and the interconnection, the barrier layer containing an oxide including copper (Cu), silicon (Si) and manganese (Mn);
wherein the barrier layer is formed by an oxide including copper (Cu), silicon (Si) and manganese (Mn), the barrier layer having atomic concentration of copper (Cu) decreasing from the interconnection side toward the insulating film side, atomic concentration of silicon (Si) decreasing from the insulating film side toward the interconnection side, and atomic concentration of manganese (Mn) maximized in a region in which the atomic concentration of copper (Cu) and the atomic concentration of silicon (Si) are almost the same. - View Dependent Claims (14, 18, 19, 21, 22, 23)
- an insulating film including silicon (Si);
Specification