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Semiconductor device, its manufacturing method, and sputtering target material for use in the method

  • US 8,188,599 B2
  • Filed: 02/27/2007
  • Issued: 05/29/2012
  • Est. Priority Date: 02/28/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an insulating film including silicon (Si);

    an interconnection located in a groove disposed on the insulating film the interconnection including copper (Cu); and

    a barrier layer located between the insulating film and the interconnection, the barrier layer including a manganese (Mn)-based oxide having an atomic concentration of manganese (Mn) maximized in a central part of the barrier layer.

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