Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method

• US 8,189,195 B2
• Filed: 05/09/2007
• Issued: 05/29/2012
• Est. Priority Date: 05/09/2007
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Den Boef, Arie Jeffrey, Cramer, Hugo Augustinus Joseph, Dusa, Mircea, Setija, Irwan Dani
• Primary Examiner(s): Chowdhury, Tarifur
• Assistant Examiner(s): STOCK JR, GORDON J
• Application Number:
  US11/798,039
• Publication Number:
  US 20080279442A1
• Time in Patent Office: 1,847 Days
• Field of Search: None
• US Class Current: 356/400
• CPC Class Codes: G03F 1/84 Inspecting
• CPC Class Codes: G03F 7/7065 Defects, e.g. optical inspection of patterned layer for defects

Abstract

A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.

Claims

1. A method of measuring a property of a substrate, the method comprising:

generating a patterned mask configured to cause a radiation beam passing through the mask to acquire a pattern;

simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern;

determining at least one location of the simulated pattern that is prone to patterning errors;

irradiating the substrate with the patterned radiation beam using a lithographic process;

measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, the measuring comprising irradiating a measurement spot with a first radiation source, irradiating a portion of the pattern on the substrate that is larger than the measurement spot with a second radiation source, and comparing relative positions of the measurement spot and the portion of the pattern that is larger than the measurement spot; and

adjusting the lithographic process according to said measuring; and

reconstructing a portion of the pattern within the measurement spot using an image of the pattern and the position of the measurement spot relative to the portion of the pattern.

2. A method according to claim 1, further comprising comparing diffraction patterns of a radiation beam reflected from a surface of the substrate with diffraction patterns of known substrate surface properties.

3. A method comprising:

choosing a measurement spot corresponding to a location of a pattern that has been determined as being prone to patterning errors;

irradiating the measurement spot on the pattern on a substrate with a first radiation source;

irradiating, with a second radiation source, a portion of the pattern on the substrate that is larger than the measurement spot irradiated by the first radiation source;

detecting radiation that is reflected from the measurement spot and the portion of the pattern with a first detector and outputting an image of relative positions of the measurement spot and the portion of the pattern;

comparing a position of the measurement spot with respect to the portion of the pattern and outputting a position of the measurement spot relative to the portion of the pattern;

detecting radiation from the first radiation source having been diffracted from the measurement spot using a second detector and outputting a diffraction spectrum associated with the pattern; and

reconstructing the pattern within the measurement spot using an image of the pattern and the value of the position of the measurement spot relative to the portion of the pattern.

4. An inspection apparatus configured to measure a property of a substrate, the inspection apparatus comprising:

a first radiation source configured to irradiate a measurement spot on a patterned target of a substrate;

a second radiation source configured to irradiate an area of the patterned target that is larger than the measurement spot;

a first detector configured to detect (1) radiation originating from the first radiation source and having been reflected from the measurement spot, and (2) radiation originating from the second radiation source and having been reflected from the area of the patterned target that is larger than the measurement spot, and to output an image of relative positions of the measurement spot and the area of the patterned target that is larger than the measurement spot;

an image processor configured to receive the output of the first detector, to compare a position of the measurement spot with respect to the area of the patterned target, and to output a position of the measurement spot relative to the area of the patterned target;

a second detector configured to detect radiation from the first radiation source having been diffracted from the measurement spot, and to output a diffraction spectrum corresponding to the patterned target; and

a processor configured to process the output of the image processor and the output of the second detector to reconstruct a pattern of the patterned target within the measurement spot.

5. The inspection apparatus according to claim 4, wherein the image processor is configured to compare the output of the first detector with stored values of measurement spot positions to determine which of the stored values most closely matches the output of the first detector, and to output a best match value.

6. The inspection apparatus according to claim 4, wherein the processor is configured to compare the output of the image processor and the output of the second detector with stored values of patterned targets in order to determine which of the stored values most closely matches the output of the second detector in conjunction with a relative position output of the image processor to obtain a best match reconstruction value.

7. The inspection apparatus according to claim 4, wherein the image processor is configured to determine a position of the measurement spot relative to a second spot on the patterned target, the second spot being a predetermined spot that is known to be sensitive to errors in production of the pattern.

8. The inspection apparatus according to claim 4, further comprising a high numerical aperture objective configured to focus a light beam from the first light source onto the patterned target of the substrate.

9. The inspection apparatus according to claim 4, wherein the measurement spot size is of the order of about 300 nm.

10. The inspection apparatus according to claim 4, further comprising a timer and controller configured to prevent the second radiation source from irradiating the substrate while the second detector is detecting diffracted radiation from the substrate such that the second detector detects only radiation from the first radiation source.

11. The inspection apparatus according to claim 4, configured to inspect a non-periodic pattern.

12. The inspection apparatus according to claim 4, further comprising a color filter between the substrate and the first detector such that a detected measurement spot is filtered.

13. The inspection apparatus according to claim 4, wherein an acquisition time of a measurement spot by the first detector is less than about 1 ms.

14. The inspection apparatus according to claim 4, further comprising a feedback system configured to switch the second radiation source off during acquisition of diffracted radiation beams by the second detector.

15. The inspection apparatus according to claim 4 wherein the second radiation source is an extended light source.

16. The inspection apparatus according to claim 4, wherein the first radiation source comprises a laser.

17. The inspection apparatus according to claim 4, wherein the second radiation source is pulsed.

18. The inspection apparatus according to claim 4, wherein the inspection apparatus is configured to acquire a series of radiation measurements for a plurality of locations of the measurement spot.

19. The inspection apparatus according to claim 14, wherein the duration of the radiation beam acquisition by the second detector, during which the second radiation source is switched off, is approximately 0.1 ms.

20. The inspection apparatus according to claim 15, wherein the second radiation source is an LED.

21. The inspection apparatus according to claim 15, wherein the second radiation source is a white-light LED.

22. The inspection apparatus according to claim 16, wherein the laser is tunable.

23. The inspection apparatus according to claim 22, wherein the laser comprises a super-continuum laser and an acousto-optic tunable filter.

24. The inspection apparatus according to claim 17, wherein the second radiation source is switched on and off in order to create the pulse.

25. The inspection apparatus according to claim 24, further comprising a shutter configured alternately to allow and to prevent radiation from the second radiation source from reaching the substrate.

26. The inspection apparatus according to claim 18, further configured to move the first radiation source in order to change a measurement spot position relative to a patterned target position.

27. The inspection apparatus according to claim 18, further configured to move the substrate in order to change a relative position of the measurement spot with respect to the patterned target.

28. The inspection apparatus according to claim 27, further comprising a substrate table configured to support a substrate, wherein the inspection apparatus is configured to scan the substrate table to move the substrate.

29. A method of measuring a property of a substrate, the method comprising:

irradiating a measurement spot on a patterned target on a substrate with a first radiation source;

irradiating, with a second radiation source, a portion of the patterned target on the substrate that is larger than the measurement spot irradiated by the first radiation source;

detecting with a first detector (1) radiation originating from the first radiation source and that is reflected from the measurement spot and, (2) radiation originating from the second radiation source and having been reflected from the portion of the patterned target that is larger than the measurement spot and, outputting an image of relative positions of the measurement spot and the portion of the patterned target that is larger than the measurement spot;

comparing a position of the measurement spot with respect to the portion of the patterned target and outputting a value of the position of the measurement spot relative to the portion of the patterned target;

detecting radiation from the first radiation source having been diffracted from the measurement spot using a second detector and outputting a diffraction spectrum associated with the patterned target; and

reconstructing a pattern of the patterned target within the measurement spot using an image of the patterned target and a position of the measurement spot relative to the portion of the patterned target.

30. A lithographic apparatus configured to measure a property of a substrate, the lithographic apparatus comprising:

a first radiation source configured to irradiate a measurement spot on a patterned target of a substrate;

a second radiation source configured to irradiate an area of the patterned target that is larger than the measurement spot;

a first detector configured to detect (1) radiation originating from the first radiation source and having been reflected from the measurement spot, and (2) radiation originating from the second radiation source and having been reflected from the area of the patterned target that is larger than the measurement spot, and to output an image of relative positions of the measurement spot and the area of the patterned target that is larger than the measurement spot;

an image processor configured to receive the output of the first detector, to compare a position of the measurement spot with respect to the area of the patterned target and to output a value of the position of the measurement spot relative to the area of the patterned target;

a second detector configured to detect radiation from the first radiation source having been diffracted from the measurement spot and outputting a diffraction spectrum corresponding to the patterned target; and

a processor for processing the output of the image processor and the output of the second detector to reconstruct a pattern of the patterned target within the measurement spot.

31. A lithographic cell configured to measure a property of a substrate, the lithographic cell comprising:

a first radiation source configured to irradiate a measurement spot on a patterned target of a substrate;

a second radiation source configured to irradiate an area of the patterned target that is larger than the measurement spot;

a first detector configured to detect (1) radiation originating from the first radiation source and having been reflected from the measurement spot, and (2) radiation originating from the second radiation source and having been reflected from the area of the patterned target that is larger than the measurement spot, and to output an image of relative positions of the measurement spot and the area of the patterned target that is larger than the measurement spot;

an image processor configured to receive the output of the first detector, to compare a position of the measurement spot with respect to the area of the patterned target and to output a position of the measurement spot relative to the area of the patterned target;

a second detector configured to detect radiation from the first radiation source having been diffracted from the measurement spot and outputting a diffraction spectrum corresponding to the patterned target; and

a processor for processing the output of the image processor and the output of the second detector to reconstruct a pattern of the patterned target within the measurement spot.

32. A device manufacturing method, comprising:

simulating radiating a substrate with a patterned radiation beam that has been patterned using a mask to obtain a simulated pattern;

determining at least one location of the simulated pattern that is prone to patterning errors;

irradiating the substrate with the patterned radiation beam using a lithographic process;

measuring an accuracy of at least one property of the at least one location of a pattern on the substrate that has been determined as being prone to patterning errors, the measuring comprises irradiating a measurement spot with a first radiation source, irradiating a portion of the pattern on the substrate that is larger than the measurement spot with a second radiation source, and comparing relative positions of the measurement spot and the portion of the pattern that is larger than the measurement spot; and

adjusting the lithographic process according to said measuring; and

reconstructing a pattern within the measurement spot using an image of the pattern and the position of the measurement spot relative to the portion of the pattern that is larger than the measurement spot.

33. The method according to claim 32, further comprising:

projecting the patterned radiation beam onto a target portion of the substrate after said adjusting.