Method to improve electrical leakage performance and to minimize electromigration in semiconductor devices
First Claim
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1. A method of forming a doped layer, the method comprising:
- planarizing a top surface of a workpiece to form a substantially planar surface with a plurality of copper conductive paths and a plurality of dielectric regions;
infusing a dopant material into and below the planarized top surface of the workpiece using a gas cluster ion beam (GCIB) to form a doped layer from the top surface to a desired depth of about 50-200 angstroms beneath the top surface in the plurality of copper conductive paths and the plurality of dielectric regions, wherein the dopant material comprises one or more dopant elements selected from the group consisting of B, C, Si, Ge, N, P, As, O, S, and Cl, and wherein said doped layer comprises between 0.1 atomic % and 10 atomic % of the dopant material; and
forming a diffusion barrier layer over the doped layer as a barrier to diffusing copper atoms, wherein the doped layer minimize electromigration of copper in the conductive paths.
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Abstract
Embodiments of methods for improving electrical leakage performance and minimizing electromigration in semiconductor devices are generally described herein. Other embodiments may be described and claimed.
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10 Claims
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1. A method of forming a doped layer, the method comprising:
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planarizing a top surface of a workpiece to form a substantially planar surface with a plurality of copper conductive paths and a plurality of dielectric regions; infusing a dopant material into and below the planarized top surface of the workpiece using a gas cluster ion beam (GCIB) to form a doped layer from the top surface to a desired depth of about 50-200 angstroms beneath the top surface in the plurality of copper conductive paths and the plurality of dielectric regions, wherein the dopant material comprises one or more dopant elements selected from the group consisting of B, C, Si, Ge, N, P, As, O, S, and Cl, and wherein said doped layer comprises between 0.1 atomic % and 10 atomic % of the dopant material; and forming a diffusion barrier layer over the doped layer as a barrier to diffusing copper atoms, wherein the doped layer minimize electromigration of copper in the conductive paths. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of minimizing electromigration in copper conductive paths, the method comprising:
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forming one or more copper conductive paths on a workpiece; and infusing a phosphorus dopant into and below the top surface of the workpiece using a gas cluster ion beam to form a phosphorus-doped layer from the top surface to a desired depth of about 50-200 angstroms beneath the top surface in the one or more copper conductive paths wherein the presence of the phosphorus dopant is effective to minimize electromigration in the one or more copper conductive paths, and wherein said phosphorus-doped layer comprises between 0.1 atomic % and 10 atomic % of the phosphorus dopant. - View Dependent Claims (9, 10)
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Specification