Method for manufacturing semiconductor device
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a first insulating layer over a substrate;
introducing the substrate having the first insulating layer into a treatment chamber kept under reduced pressure;
forming an oxide semiconductor layer over the first insulating layer using a metal oxide target attached to the treatment chamber by introduction of a sputtering gas, from which hydrogen and moisture are removed, concurrently with removal of residual moisture from the treatment chamber;
performing a dehydration treatment or a dehydrogenation treatment of the oxide semiconductor layer by heating treatment in a nitrogen atmosphere or a rare gas atmosphere, then, supplying oxygen to the oxide semiconductor layer by cooling treatment in an oxygen atmosphere;
forming a second insulating layer over the oxide semiconductor layer by a sputtering method.
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Accused Products
Abstract
An object is to provide a semiconductor device having stable electric characteristics in which an oxide semiconductor is used. An oxide semiconductor layer is subjected to heat treatment for dehydration or dehydrogenation treatment in a nitrogen gas or an inert gas atmosphere such as a rare gas (e.g., argon or helium) or under reduced pressure and to a cooling step for treatment for supplying oxygen in an atmosphere of oxygen, an atmosphere of oxygen and nitrogen, or the air (having a dew point of preferably lower than or equal to −40° C., still preferably lower than or equal to −50° C.) atmosphere. The oxide semiconductor layer is thus highly purified, whereby an i-type oxide semiconductor layer is formed. A semiconductor device including a thin film transistor having the oxide semiconductor layer is manufactured.
163 Citations
20 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a first insulating layer over a substrate; introducing the substrate having the first insulating layer into a treatment chamber kept under reduced pressure; forming an oxide semiconductor layer over the first insulating layer using a metal oxide target attached to the treatment chamber by introduction of a sputtering gas, from which hydrogen and moisture are removed, concurrently with removal of residual moisture from the treatment chamber; performing a dehydration treatment or a dehydrogenation treatment of the oxide semiconductor layer by heating treatment in a nitrogen atmosphere or a rare gas atmosphere, then, supplying oxygen to the oxide semiconductor layer by cooling treatment in an oxygen atmosphere; forming a second insulating layer over the oxide semiconductor layer by a sputtering method. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; introducing the substrate having the gate electrode layer and the gate insulating layer into a treatment chamber kept under reduced pressure; forming an oxide semiconductor layer over the gate insulating layer using a metal oxide target attached to the treatment chamber by introduction of a sputtering gas, from which hydrogen and moisture are removed, concurrently with removal of residual moisture from the treatment chamber; performing a dehydration treatment or a dehydrogenation treatment of the oxide semiconductor layer by heating treatment in a nitrogen atmosphere or a rare gas atmosphere, then, supplying oxygen to the oxide semiconductor layer by cooling treatment in an oxygen atmosphere; forming a source electrode layer and a drain electrode layer over the dehydrated or dehydrogenated oxide semiconductor layer to which oxygen has been supplied; and forming an insulating layer over the gate insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer by a sputtering method. - View Dependent Claims (8, 9, 10, 11, 12, 13)
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14. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode layer over a substrate; forming a gate insulating layer over the gate electrode layer; introducing the substrate having the gate electrode layer and the gate insulating layer into a treatment chamber kept under reduced pressure; forming an oxide semiconductor layer over the gate insulating layer using a metal oxide target attached to the treatment chamber by introduction of a sputtering gas, from which hydrogen and moisture are removed, concurrently with removal of residual moisture from the treatment chamber; performing a dehydration treatment or a dehydrogenation treatment of the oxide semiconductor layer by heating treatment in a nitrogen atmosphere or a rare gas atmosphere, then, supplying oxygen to the oxide semiconductor layer by cooling treatment in an atmosphere of oxygen and nitrogen or an air atmosphere having a dew point of lower than or equal to −
40°
C.;forming a source electrode layer and a drain electrode layer over the dehydrated or dehydrogenated oxide semiconductor layer to which oxygen has been supplied; and forming an insulating layer over the gate insulating layer, the oxide semiconductor layer, the source electrode layer, and the drain electrode layer by a sputtering method. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification