Method for bonding layers, corresponding device and organic light-emitting diode
First Claim
1. A method for manufacturing organic light-emitting diodes, wherein at least one element of the group consisting of anode, cathode, radiation-emitting polymers, electron hole-conducting polymers, radiation-emitting small molecules and electron hole-conducting small molecules is encapsulated between two cover layers with the aid of thermocompression wherein several organic light-emitting diode structures are arranged between the two cover layers and separated after the encapsulation.
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Accused Products
Abstract
A method for bonding several layers, which comprise at least one thermally bondable material, by means of a joint layer produced with the aid of thermocompression at least one of the layers comprising a semiconductor material, as well as to a correspondingly manufactured device. Also disclosed is a method for manufacturing an organic light-emitting diode and an organic light-emitting diode that is encapsulated between two cover layers with the aid of thermocompression.
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Citations
17 Claims
- 1. A method for manufacturing organic light-emitting diodes, wherein at least one element of the group consisting of anode, cathode, radiation-emitting polymers, electron hole-conducting polymers, radiation-emitting small molecules and electron hole-conducting small molecules is encapsulated between two cover layers with the aid of thermocompression wherein several organic light-emitting diode structures are arranged between the two cover layers and separated after the encapsulation.
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6. A method for producing a semiconductor device by bonding a plurality of layer sequences, wherein each of the layer sequences comprises a thermally bondable layer consisting of gold, and at least one of the layer sequences comprises a semiconductor material,
wherein the method comprises applying thermocompression to the plurality of layer sequences for producing a joint layer formed by said gold layers; -
wherein each of the layer sequences further comprises a blocking layer comprised of a material selected from the group consisting of
1) TiW alloy;
2) TiW;
N alloy;
3) nickel;
4) nickel in combination with a TiW alloy; and
5) nickel in combination with a T1W;
N alloy;wherein each of the layer sequences further comprises an intermediate layer comprising aluminum as a ductile layer; and wherein in each of the layer sequences, in a direction away from the joint layer, the blocking layer is located between the joint layer and the intermediate layer. - View Dependent Claims (7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification