Methods and systems for precisely relatively positioning a waist of a pulsed laser beam and method and system for controlling energy delivered to a target structure

• US 8,193,468 B2
• Filed: 10/11/2005
• Issued: 06/05/2012
• Est. Priority Date: 03/29/2001
• Status: Expired due to Fees

• Current Assignee: Electro Scientific Industries Incorporated (MKS Instruments Incorporated)
• Original Assignee: GSI Group Corporation (Novanta Inc.)
• Inventors: Cordingley, James J., Griffiths, Joseph J., Smart, Donald V.
• Primary Examiner(s): ELVE, MARIA ALEXANDRA
• Application Number:
  US11/247,541
• Publication Number:
  US 20060028655A1
• Time in Patent Office: 2,429 Days
• Field of Search: 219/121.69, 219/121.85, 219/121.68, 219/121.67, 219/121.72
• US Class Current: 219/121.69
• CPC Class Codes: B23K 2101/38 Conductors
• CPC Class Codes: B23K 2101/40 Semiconductor devices
• CPC Class Codes: B23K 2103/10 Aluminium or alloys thereof
• CPC Class Codes: B23K 2103/12 Copper or alloys thereof
• CPC Class Codes: B23K 2103/172 wherein at least one of the layers is non-metallic
• CPC Class Codes: B23K 2103/50 Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
• CPC Class Codes: B23K 26/032 using optical means
• CPC Class Codes: B23K 26/04 Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
• CPC Class Codes: B23K 26/043 along the beam path, i.e. alignment of laser beam axis relative to laser beam apparatus
• CPC Class Codes: B23K 26/0613 having a common axis B23K26/0619 takes precedence
• CPC Class Codes: B23K 26/0622 by shaping pulses
• CPC Class Codes: B23K 26/0624 using ultrashort pulses, i.e. pulses of 1ns or less
• CPC Class Codes: B23K 26/064 by means of optical elements, e.g. lenses, mirrors or prisms
• CPC Class Codes: B23K 26/0643 comprising mirrors
• CPC Class Codes: B23K 26/0648 comprising lenses
• CPC Class Codes: B23K 26/0652 comprising prisms
• CPC Class Codes: B23K 26/0665 by beam condensation on the workpiece, e.g. for focusing
• CPC Class Codes: B23K 26/067 Dividing the beam into multiple beams, e.g. multifocusing
• CPC Class Codes: B23K 26/0736 into an oval shape, e.g. elliptic shape
• CPC Class Codes: B23K 26/082 Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
• CPC Class Codes: B23K 26/10 : using a fixed support , i.e. involving moving the laser beam
• CPC Class Codes: B23K 26/16 : Removal of by-products, e.g. particles or vapours produced during treatment of a workpiece by a fluid stream B23K26/142
• CPC Class Codes: B23K 26/361 : for deburring or mechanical trimming B23K26/351 takes precedence
• CPC Class Codes: B23K 26/389 : of fluid openings, e.g. nozzles, jets laser machining of inkjet nozzles B41J2/1634
• CPC Class Codes: B23K 26/40 : taking account of the properties of the material involved
• CPC Class Codes: H01L 21/485 : Adaptation of interconnections, e.g. engineering charges, repair techniques
• CPC Class Codes: H01L 21/76888 : By rendering at least a portion of the conductor non conductive, e.g. oxidation
• CPC Class Codes: H01L 21/76894 : using a laser, e.g. laser cutting, laser direct writing, laser repair
• CPC Class Codes: H01L 22/12 : for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions electrical measurement of diffusions H01L22/14
• CPC Class Codes: H01L 23/5258 : the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 : Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H05K 3/0026 : by laser ablation

Abstract

A method and system for locally processing a predetermined microstructure formed on a substrate without causing undesirable changes in electrical or physical characteristics of the substrate or other structures formed on the substrate are provided. The method includes providing information based on a model of laser pulse interactions with the predetermined microstructure, the substrate and the other structures. At least one characteristic of at least one pulse is determined based on the information. A pulsed laser beam is generated including the at least one pulse. The method further includes irradiating the at least one pulse having the at least one determined characteristic into a spot on the predetermined microstructure. The at least one determined characteristic and other characteristics of the at least one pulse are sufficient to locally process the predetermined microstructure without causing the undesirable changes.

Claims

1. A method for thermal-based laser processing a multilayer, multi-material memory device including a silicon substrate and a target metal link microstructure surrounded by materials having dissimilar thermal and/or optical properties, the method comprising:

generating a single multi-stage temporally shaped laser pulse, said laser pulse having a selected pulse width and a temporal shape, said temporal shape comprising a fast leading edge and a fast fall time, respectively, relative to a q-switched pulse shape having the selected pulse width;

irradiating and overfilling the target link with the single temporally shaped laser pulse; and

removing at least a portion of the link with a thermal-based process without creating undesirable changes to other structures or the substrate with the single temporally shaped laser pulse;

wherein each pulse stage is characterized by a controlled amplitude and temporal shape, and a duration comprising a respective portion of the overall pulse width, and

wherein the single temporally shaped laser pulse comprises a higher power first portion and a lower power second portion.

2. The method as claimed in claim 1 wherein the first and second portions are portions of a single pulse that is modulated in respective stages with a variable amplitude drive waveform or shaped modulation voltage pulse.

3. The method as claimed in claim 1 wherein the first and second portions are optically combined portions.

4. The method as claimed in claim 1 wherein the second portion is delayed relative to the first portion.

5. The method as claimed in claim 1 wherein the first portion of the temporal pulse shape has a high peak power and a substantially Gaussian shape and the second portion of the temporal pulse shape has a substantially square shape with power lower than the first portion.

6. The method as claimed in claim 1 wherein the leading edge has a rise time fast enough to efficiently couple energy into the metal link.

7. The method as claimed in claim 6 wherein the rise time is up to about two nanoseconds.

8. The method as claimed in claim 1 wherein the first and second portions of the at least one pulse are sufficient to process the link.

9. The method as claimed in claim 1 wherein the first portion has a peak power greater than or equal to 10⁹ watts per square centimeter.

10. The method as claimed in claim 1 wherein the second portion is a substantially square shape and a fall time less than 3 ns.

11. The method as claimed in claim 1 wherein at least a portion of the pulse shape comprises a square temporal pulse shape.

12. The method as claimed in claim 1 wherein the step of irradiating is completed in a period between a few nanoseconds to tens of nanoseconds.

13. The method as claimed in claim 12 wherein the period is less than 10 nanoseconds.

14. The method as claimed in claim 1 wherein the first portion is less than 5 ns long.

15. The method as claimed in claim 1 wherein the first and second stages are modulated with different drive amplitudes.

16. The method as claimed in claim 1 wherein the pulse energy is 0.1 to 5 uJ.

17. The method as claimed in claim 1 wherein the area irradiated is less than 20 square microns.

18. The method as claimed in claim 1 wherein the area irradiated is less than 10 microns square microns.

19. A method for thermal based laser processing a multilayer, multi-material memory device including a silicon substrate and a microstructure surrounded by materials having dissimilar thermal and/or optical properties, the method comprising:

generating a single temporally shaped laser pulse;

controlling pulse amplitude of the shaped pulse, wherein the predetermined pulse shape has multiple stages, the pulse amplitude providing a pulse width and a pulse shape having a fast rising edge and a high energy density followed by a reduced power and a fast fall time relative to a q-switched pulse shape having the selected pulse width; and

irradiating an area less than 20 square microns with the irradiance on the target structure at greater than about 10⁹ watts per square centimeter and at least 60% of the energy required to open the link completely with a single pulse,

whereby energy is efficiently coupled into the link, at least a portion of the link is removed and damage to the substrate is avoided.

20. The method as claimed in claim 19 wherein the pulse shape is controlled by a shaped modulation voltage pulse.

21. The method as claimed in claim 19 wherein pulse amplitude is controlled by a variable amplitude drive waveform.

22. The method as claimed in claim 19 wherein pulse shape is controlled by direct diode modulation.

23. The method as claimed in claim 19 wherein the fast rising edge or the fast fall time is provided by chopping the lead or tail edge of a pulse.

24. The method as claimed in claim 19 wherein at least a portion of the microstructure is cleanly removed by the at least one temporally shaped pulse.

25. The method as claimed in claim 19 further comprising irradiating the link with 60%-70% of the energy required to open the link completely with a single pulse with each of first and second single pulses.

26. The method as claimed in claim 19 wherein the link is completely opened by a single shaped pulse.

27. The method as claimed in claim 19 wherein generating comprises optically combining temporally different pulses.

28. The method as claimed in claim 19 wherein the 10% to 90% rise time of the fast rising edge is less than 2 ns.

29. The method as claimed in claim 19 wherein the 10% to 90% rise time of the fast rising edge is less than one nanosecond.

30. The method as claimed in claim 19 wherein the fall time less than 3 ns.

31. The method as claimed in claim 19 wherein the step of irradiating is completed in a period from a few nanoseconds to tens of nanoseconds.

32. The method as claimed in claim 19 wherein the fast rising edge and high energy density stage comprise a pulse duration portion shorter than 5 ns.

33. The method as claimed in claim 19 wherein the energy or the at least one pulse is 0.1 to 5 uJ.

34. The method as claimed in claim 19 wherein the area irradiated is less than 10 square microns.

35. The method as claimed in claim 19 wherein the first stage of the temporal pulse shape has a high peak power and a substantially Gaussian shape and the second stage of the temporal pulse shape has a substantially square shape with peak power lower than the first stage.

36. A method for thermal-based laser processing a multilayer, multi-material memory device including a silicon substrate and a target metal link microstructure surrounded by materials having dissimilar thermal and/or optical properties, the method comprising:

generating laser radiation comprising a single pulse having a temporal pulse shape, said temporal pulse shape having a rise time fast enough to efficiently couple laser energy into the target, a duration sufficient to cleanly remove a portion of the target structure, and a fall time fast enough to avoid undesirable damage relative to a q-switched pulse shape, said temporal pulse shape further comprising a portion with high peak power followed by a second portion with lower power; and

irradiating the microstructure with the laser radiation;

wherein the temporal pulse shape is controlled over portions each having a duration less than 1 ns.

37. The method as claimed in claim 36 further comprising

generating seed laser radiation;

shaping the seed radiation amplitude to generate the temporal pulse shape by applying a shaped modulation pulse voltage to a high-speed electro-optic modulator; and

amplifying the seed pulse to generate the laser radiation having the temporal pulse shape,

wherein the shape comprises;

a rise time of up to 2 ns, and

a fall time less than 3 ns.

38. The method as claimed in 36 further comprising:

generating a q-switched laser pulse; and

shaping the q-switched laser pulse amplitude to generate the temporal pulse shape by applying a shaped modulation pulse voltage to a high-speed electro-optic modulator.

39. The method as claimed in claim 38 where in at least one stage of the voltage pulse generates an amplitude within 10% of a constant amplitude.

40. The method as claimed in 4 wherein the delay is a programmable delay.

41. The method as claimed in 4 wherein the delay controls peak to peak spacing of combined pulses.

42. The method as claimed in 41 wherein at least one pulse has a duration of greater than a few picoseconds to several nanoseconds.

43. The method as claimed in 4 wherein the delayed portion temporal pulse shape is a fast rising, square pulse.

44. The method as claimed in 1 wherein surrounding material comprises underlying layers, overlying layers or adjacent material.

45. The method as claimed in 1 wherein surrounding material comprises silicon dioxide, silicon nitride, a dielectric, an insulator or a high transmission material.

46. The method as claimed in 1 wherein the metal is one of gold, aluminum, titanium, platinum, and copper.

47. A method for thermal-based laser processing a multilayer, multi-material memory device including a silicon substrate and a target metal link microstructure, the method comprising:

selecting a multi-stage temporal pulse shape based on physical properties of the target link microstructure;

automatically generating a laser output comprising a single pulse having the selected temporal pulse shape with a controlled amplitude and temporal shape;

irradiating and overfilling the link with the laser output; and

removing at least a portion of the link in a thermal process without creating undesirable changes to other structures or the substrate.