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Thin film transistor, including compound semiconductor oxide, method of manufacturing the same and flat panel display device having the same

  • US 8,193,535 B2
  • Filed: 10/19/2011
  • Issued: 06/05/2012
  • Est. Priority Date: 07/08/2008
  • Status: Active Grant
First Claim
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1. A flat panel display device, comprising:

  • opposing first and second substrates;

    pixel electrodes disposed on the first substratescan and data lines disposed on the first substrate, around the pixel electrodes;

    thin film transistors connected to the scan lines, the data lines, and the pixel electrodes, to control the operations of the pixel electrodes, the thin film transistors each comprising,a gate electrode formed on the first substrate,a gate insulating film formed on the gate electrode and the first substrate,an activation layer formed on the gate insulating layer and insulated from the gate electrode by the insulating layer, the activation layer comprising a compound semiconductor oxide or zinc oxide (ZnO),a passivation layer formed on the activation layer, comprising an inorganic oxide comprising at least one metal comprised in the activation layer, andsource and drain electrodes that contact the activation layer;

    a common electrode disposed on the second substrate; and

    a liquid crystal layer injected into a space between the first and second substrates,wherein the inorganic oxide comprises gallium (Ga), indium (In), tin (Sn), zirconium (Zr), hafnium (Hf), vanadium (V), or a combination thereof.

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