Light emitting device

• US 8,193,536 B2
• Filed: 01/25/2010
• Issued: 06/05/2012
• Est. Priority Date: 03/13/2009
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: Song, Hyun Don
• Primary Examiner(s): Weiss, Howard
• Assistant Examiner(s): Rao, Steven
• Application Number:
  US12/693,239
• Publication Number:
  US 20100230699A1
• Time in Patent Office: 862 Days
• Field of Search: 257/74, 257/94, 257/97
• US Class Current: 257/74
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting device including a light emitting structure having a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a first electrode on the light emitting structure; and a photon escape layer on the light emitting structure. Further, the photon escape layer has a refractive index that is between a refractive index of the light emitting structure and a refractive index of an encapsulating material with respect to the light emitting structure such that an escape probability for photons emitted by the light emitting structure is increased.

Claims

1. A light emitting device, comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;

a first electrode on the first conductive semiconductor layer;

a photon escape layer on a portion of the first electrode; and

a pad on the first electrode,

wherein the pad is disposed in the photon escape layer, and

wherein the photon escape layer has a refractive index that is between a refractive index of the light emitting structure and a refractive index of an encapsulating material with respect to the light emitting structure.

2. The light emitting device according to claim 1, wherein the photon escape layer is formed only on an upper surface of the light emitting structure.

3. The light emitting device according to claim 1, wherein the first electrode has a wing type or a lattice pattern.

4. The light emitting device according to claim 1, wherein the photon escape layer is both on the first electrode and the first conductive semiconductor layer.

5. The light emitting device according to claim 1, wherein the photon escape layer includes a dielectric film or a conductive film.

6. The light emitting device according to claim 1, wherein the photon escape layer comprises at least one of TiO₂, Al₂O₃, ZnO, MgF₂, In₂O₃, SnO₂, TiN_x, Ga₂O₃, ITO, In—

Zn—

O, and ZnO;

Al.

7. The light emitting device according to claim 1, wherein the pad contacts the photon escape layer.

8. The light emitting device according to claim 1, further comprising:

an insulating layer around the light emitting structure,

wherein a material of the photon escape layer is different from a material of the insulating layer.

9. The light emitting device according to claim 8, wherein the photon escape layer is on the insulating layer, the first conductive semiconductor layer and the first electrode at the same time.

19. The light emitting device according to claim 1, wherein the photon escape layer comprises a transmitting layer.

10. A light emitting device, comprising:

a light emitting structure, wherein the light emitting structure includes a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;

a first electrode on the first conductive semiconductor layer;

a photon escape layer on a portion of the first electrode;

a pad on the first electrode; and

a second electrode under the second conductive semiconductor layer;

wherein the pad does not vertically overlap with the photon escape layer, and

wherein the photon escape layer has a refractive index that is between a refractive index of the light emitting structure and a refractive index of an encapsulating material with respect to the light emitting structure.

11. The light emitting device according to claim 10, wherein the photon escape layer is formed only on an upper surface of the light emitting structure.

12. The light emitting device according to claim 10, wherein the first electrode has a wing type or a lattice pattern.

13. The light emitting device according to claim 10, wherein the photon escape layer is both on the first electrode and the first conductive semiconductor layer.

14. The light emitting device according to claim 10, wherein the photon escape layer includes a dielectric film or a conductive film.

15. The light emitting device according to claim 10, wherein the photon escape layer comprises at least one of TiO₂, Al₂O₃, ZnO, MgF₂, In₂O₃, SnO₂, TiN_x, Ga₂O₃, ITO, In—

Zn—

O, and ZnO;

Al.

16. The light emitting device according to claim 10, wherein the pad contacts a side surface of the photon escape layer.

17. The light emitting device according to claim 10, further comprising:

an insulating layer around the light emitting structure,

wherein a material of the photon escape layer is different from a material of the insulating layer.

18. The light emitting device according to claim 17, wherein the photon escape layer is on the insulating layer, the first conductive semiconductor layer and the first electrode at the same time.

20. The light emitting device according to claim 10, wherein the photon escape layer comprises a transmitting layer.